Otrzymywanie i badanie właściwości monokryształów azotku galu

Grzegorz Kamler

Abstract

Gallium nitride powder was prepared from gallium and ammonia at temperatures of 1000 - 1200 °C. Parameters of the crystallographic lattice as well as photoluminescence and Raman spectra were determined for the obtained powder. As a result of GaN powder sublimation GaN single crystals of 3.x2.x0.2 mm were received, at the temperatures 1200-1250°C. Single crystals of gallium nitride were also synthesised in a reaction of gallium vapours with ammonia. The crystals up to 1.5x1x0.1 mm were obtained at the temperature range of 850 - 1150 °C. The obtained single crystals were studied by X-ray methods resulting in structure refining, mapping of reflexes and rocking curves. In addition Raman spectroscopy studies and conductivity measurements were carried out. It was also demonstrated that the crystallographic structure of the crystals and powders was well pronounced. Homoepitaxial GaN films of several tens of micrometers were deposited onto selected GaN single crystals. The influence of grain size on the GaN sublimation process was studied. The 50 - 500 mm GaN crystalline powder sublimation resulted in the growth of single crystals whose quality was significantly better in comparison to effects of the sublimation of a few micrometer crystalline powder. The GaN crystals were doped with manganese. It acquired then paramagnetic properties.
Diploma typeDoctor of Philosophy
Author Grzegorz Kamler (FC / CICSST)
Grzegorz Kamler,,
- Chair Of Inorganic Chemistry And Solid State Technology
Title in PolishOtrzymywanie i badanie właściwości monokryształów azotku galu
Languagepl polski
Certifying UnitFaculty of Chemistry (FC)
Disciplinechemical engineering / (chemical sciences domain) / (physical sciences)
Defense Date14-05-2001
Supervisor Sławomir Podsiadło (FC / CICSST)
Sławomir Podsiadło,,
- Chair Of Inorganic Chemistry And Solid State Technology

Pages196
Keywords in Polishoptoelektronika, monokryształy, azotek galu, badania materiałów, materiały półprzewodnikowe, preparatyka nieorganiczna, prace doktorskie
Abstract in EnglishGallium nitride powder was prepared from gallium and ammonia at temperatures of 1000 - 1200 °C. Parameters of the crystallographic lattice as well as photoluminescence and Raman spectra were determined for the obtained powder. As a result of GaN powder sublimation GaN single crystals of 3.x2.x0.2 mm were received, at the temperatures 1200-1250°C. Single crystals of gallium nitride were also synthesised in a reaction of gallium vapours with ammonia. The crystals up to 1.5x1x0.1 mm were obtained at the temperature range of 850 - 1150 °C. The obtained single crystals were studied by X-ray methods resulting in structure refining, mapping of reflexes and rocking curves. In addition Raman spectroscopy studies and conductivity measurements were carried out. It was also demonstrated that the crystallographic structure of the crystals and powders was well pronounced. Homoepitaxial GaN films of several tens of micrometers were deposited onto selected GaN single crystals. The influence of grain size on the GaN sublimation process was studied. The 50 - 500 mm GaN crystalline powder sublimation resulted in the growth of single crystals whose quality was significantly better in comparison to effects of the sublimation of a few micrometer crystalline powder. The GaN crystals were doped with manganese. It acquired then paramagnetic properties.
Thesis file
Kamler_Grzegorz_otrzymywanie.pdf 7.97 MB
Citation count*4 (2015-07-23)

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