# Baza wiedzy: Politechnika Warszawska

Powrót

## Application of epitaxial graphene layers on silicon carbide in the technology of semiconductor devices

### Tymoteusz Ciuk

#### Abstract

The dissertation has the form of a collection of four articles published by the author in renowned scientific journals. The articles are prefaced with an introduction to graphene’s history, its fundamental principles and synthesis overview, as well as a guide through the electrical properties of epitaxial Chemical Vapour Deposited (CVD) graphene on silicon carbide and the technology and properties of a graphene-based magnetic field sensor in reference to the authored publications. The author contributes to the state of the art through the experimental determination of the intrinsic charge carrier concentration and charge carrier mobility in hydrogen-intercalated quasi-free-standing monolayer and quasi-free-standing bilayer graphene epitaxially grown by Chemical Vapour Deposition on semi-insulating on-axis 4H-SiC(0001) and 6H-SiC(0001) substrates, and verifies the theoretically postulated explanation for the origin of the intrinsic doping type and level based on the spontaneous polarisation of the hexagonal polytypes of silicon carbide. Additionally, the author develops a method and experimentally determines the inherent anisotropy in graphene’s sheet resistance and the resultant anisotropy in graphene’s offset voltage that have they origin in the characteristic morphology of silicon carbide surface marked with a pattern of terraces and step edges. Based on the collected knowledge and experience the author assesses the applicability of quasi-free-standing epitaxial graphene on silicon carbide in magnetic field detection and verifies its suitability for an electron-beam ithographically defined device processing. Finally, he develops a technology of a complete, electrically stable and environmentally resistant, classical Hall effect sensor based on epitaxial Chemical Vapour Deposited hydrogen-intercalated quasi-free-standing monolayer graphene on silicon carbide and determines its room-temperature electrical and magnetic properties, thus proving graphene’s potential in the technology of electronic devices.
Identyfikator pozycji
WUT17cbf2867a4f41a58a33232ec803ccc7
Rodzaj dyplomu
Praca doktorska
Autor
Tytuł w języku angielskim
Application of epitaxial graphene layers on silicon carbide in the technology of semiconductor devices
Język
(en) angielski
Jednostka dyplomująca
Wydział Elektroniki i Technik Informacyjnych (WEiTI)
Dyscyplina nauki
elektronika / dziedzina nauk technicznych / obszar nauk technicznych
Status pracy
Obroniona
Data rozpoczęcia
23-09-2014
25-04-2017
Promotor
Recenzenci zewnętrzni
Vitalii Dugaev Vitalii Dugaev Afiliacja nieokreślona
Paginacja
115
Słowa kluczowe w języku angielskim
x
Streszczenie w języku angielskim
The dissertation has the form of a collection of four articles published by the author in renowned scientific journals. The articles are prefaced with an introduction to graphene’s history, its fundamental principles and synthesis overview, as well as a guide through the electrical properties of epitaxial Chemical Vapour Deposited (CVD) graphene on silicon carbide and the technology and properties of a graphene-based magnetic field sensor in reference to the authored publications. The author contributes to the state of the art through the experimental determination of the intrinsic charge carrier concentration and charge carrier mobility in hydrogen-intercalated quasi-free-standing monolayer and quasi-free-standing bilayer graphene epitaxially grown by Chemical Vapour Deposition on semi-insulating on-axis 4H-SiC(0001) and 6H-SiC(0001) substrates, and verifies the theoretically postulated explanation for the origin of the intrinsic doping type and level based on the spontaneous polarisation of the hexagonal polytypes of silicon carbide. Additionally, the author develops a method and experimentally determines the inherent anisotropy in graphene’s sheet resistance and the resultant anisotropy in graphene’s offset voltage that have they origin in the characteristic morphology of silicon carbide surface marked with a pattern of terraces and step edges. Based on the collected knowledge and experience the author assesses the applicability of quasi-free-standing epitaxial graphene on silicon carbide in magnetic field detection and verifies its suitability for an electron-beam ithographically defined device processing. Finally, he develops a technology of a complete, electrically stable and environmentally resistant, classical Hall effect sensor based on epitaxial Chemical Vapour Deposited hydrogen-intercalated quasi-free-standing monolayer graphene on silicon carbide and determines its room-temperature electrical and magnetic properties, thus proving graphene’s potential in the technology of electronic devices.
Plik pracy
• Plik: 1
Ciuk.pdf
Poproś o plik WCAG

Jednolity identyfikator zasobu
https://repo.pw.edu.pl/info/phd/WUT17cbf2867a4f41a58a33232ec803ccc7/
URN
urn:pw-repo:WUT17cbf2867a4f41a58a33232ec803ccc7

Potwierdzenie
Czy jesteś pewien?
Zgłoszenie uwag dotyczących tej strony
Schowek