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Application of epitaxial graphene layers on silicon carbide in the technology of semiconductor devices

Tymoteusz Ciuk

Abstract

The dissertation has the form of a collection of four articles published by the author in renowned scientific journals. The articles are prefaced with an introduction to graphene’s history, its fundamental principles and synthesis overview, as well as a guide through the electrical properties of epitaxial Chemical Vapour Deposited (CVD) graphene on silicon carbide and the technology and properties of a graphene-based magnetic field sensor in reference to the authored publications. The author contributes to the state of the art through the experimental determination of the intrinsic charge carrier concentration and charge carrier mobility in hydrogen-intercalated quasi-free-standing monolayer and quasi-free-standing bilayer graphene epitaxially grown by Chemical Vapour Deposition on semi-insulating on-axis 4H-SiC(0001) and 6H-SiC(0001) substrates, and verifies the theoretically postulated explanation for the origin of the intrinsic doping type and level based on the spontaneous polarisation of the hexagonal polytypes of silicon carbide. Additionally, the author develops a method and experimentally determines the inherent anisotropy in graphene’s sheet resistance and the resultant anisotropy in graphene’s offset voltage that have they origin in the characteristic morphology of silicon carbide surface marked with a pattern of terraces and step edges. Based on the collected knowledge and experience the author assesses the applicability of quasi-free-standing epitaxial graphene on silicon carbide in magnetic field detection and verifies its suitability for an electron-beam ithographically defined device processing. Finally, he develops a technology of a complete, electrically stable and environmentally resistant, classical Hall effect sensor based on epitaxial Chemical Vapour Deposited hydrogen-intercalated quasi-free-standing monolayer graphene on silicon carbide and determines its room-temperature electrical and magnetic properties, thus proving graphene’s potential in the technology of electronic devices.
Record ID
WUT17cbf2867a4f41a58a33232ec803ccc7
Diploma type
Doctor of Philosophy
Author
Title in English
Application of epitaxial graphene layers on silicon carbide in the technology of semiconductor devices
Language
(en) English
Certifying Unit
Faculty of Electronics and Information Technology (FEIT)
Discipline
electronics / (technology domain) / (technological sciences)
Status
Finished
Start date
23-09-2014
Title date
25-04-2017
Supervisor
External reviewers
Tadeusz Pisarkiewicz Tadeusz Pisarkiewicz,, Undefined Affiliation
Vitalii Dugaev Vitalii Dugaev,, Undefined Affiliation
Pages
115
Keywords in English
x
Abstract in English
The dissertation has the form of a collection of four articles published by the author in renowned scientific journals. The articles are prefaced with an introduction to graphene’s history, its fundamental principles and synthesis overview, as well as a guide through the electrical properties of epitaxial Chemical Vapour Deposited (CVD) graphene on silicon carbide and the technology and properties of a graphene-based magnetic field sensor in reference to the authored publications. The author contributes to the state of the art through the experimental determination of the intrinsic charge carrier concentration and charge carrier mobility in hydrogen-intercalated quasi-free-standing monolayer and quasi-free-standing bilayer graphene epitaxially grown by Chemical Vapour Deposition on semi-insulating on-axis 4H-SiC(0001) and 6H-SiC(0001) substrates, and verifies the theoretically postulated explanation for the origin of the intrinsic doping type and level based on the spontaneous polarisation of the hexagonal polytypes of silicon carbide. Additionally, the author develops a method and experimentally determines the inherent anisotropy in graphene’s sheet resistance and the resultant anisotropy in graphene’s offset voltage that have they origin in the characteristic morphology of silicon carbide surface marked with a pattern of terraces and step edges. Based on the collected knowledge and experience the author assesses the applicability of quasi-free-standing epitaxial graphene on silicon carbide in magnetic field detection and verifies its suitability for an electron-beam ithographically defined device processing. Finally, he develops a technology of a complete, electrically stable and environmentally resistant, classical Hall effect sensor based on epitaxial Chemical Vapour Deposited hydrogen-intercalated quasi-free-standing monolayer graphene on silicon carbide and determines its room-temperature electrical and magnetic properties, thus proving graphene’s potential in the technology of electronic devices.
Thesis file
  • File: 1
    Ciuk.pdf
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Uniform Resource Identifier
https://repo.pw.edu.pl/info/phd/WUT17cbf2867a4f41a58a33232ec803ccc7/
URN
urn:pw-repo:WUT17cbf2867a4f41a58a33232ec803ccc7

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