Warstwy tytanianu baru na potrzeby mikroelektroniki – technologia, charakteryzacja i próby aplikacji

Piotr Firek

Abstract

The work presents the possibilities of obtaining thin BT layers with the use of plasma methods: Impulse Plasma Deposition - IPD and Radio Frequency Plasma Sputtering - RF PS, their characterization and development of technological processes (e.g. etching) enabling the creation of microelectronic structures such as e.g. metal-insulator-semiconductor field effect transistor, Ion Sensitive Field Effect Transistor or non-volatile memories (NVM) cells. The obtained coatings underwent characterization process with the use of different characterization methods e.g. scanning electron microscopy (SEM), atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS) and electrical characterization: current-voltage (I-V), capacitance-voltage (C-V), charge-pumping (C-P). The layers was annealed in the temperature range 300°C – 1000°C. Creation and measuring of metal-insulator-metal (MIM) type structures after annealing processes made it possible to carry out analysis and detect piezoelectric properties of BaTiO3 layers.
Diploma typeDoctor of Philosophy
Author Piotr Firek (FEIT / MO)
Piotr Firek,,
- The Institute of Microelectronics and Optoelectronics
Title in PolishWarstwy tytanianu baru na potrzeby mikroelektroniki – technologia, charakteryzacja i próby aplikacji
Languagepl polski
Certifying UnitFaculty of Electronics and Information Technology (FEIT)
Disciplineelectronics / (technology domain) / (technological sciences)
Start date23-01-2007
Defense Date30-03-2010
End date27-04-2010
Supervisor Jan Szmidt (FEIT / MO)
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics

Internal reviewers Lidia Łukasiak (FEIT / MO)
Lidia Łukasiak,,
- The Institute of Microelectronics and Optoelectronics
External reviewers Jerzy Bodzenta
Jerzy Bodzenta,,
-
Honoredyes
Pages1 - 240
Keywords in Englishbarium titanate, MISFET, ISFET , thin film
Abstract in EnglishThe work presents the possibilities of obtaining thin BT layers with the use of plasma methods: Impulse Plasma Deposition - IPD and Radio Frequency Plasma Sputtering - RF PS, their characterization and development of technological processes (e.g. etching) enabling the creation of microelectronic structures such as e.g. metal-insulator-semiconductor field effect transistor, Ion Sensitive Field Effect Transistor or non-volatile memories (NVM) cells. The obtained coatings underwent characterization process with the use of different characterization methods e.g. scanning electron microscopy (SEM), atomic force microscopy (AFM), secondary ion mass spectrometry (SIMS) and electrical characterization: current-voltage (I-V), capacitance-voltage (C-V), charge-pumping (C-P). The layers was annealed in the temperature range 300°C – 1000°C. Creation and measuring of metal-insulator-metal (MIM) type structures after annealing processes made it possible to carry out analysis and detect piezoelectric properties of BaTiO3 layers.
EU classification8030
Thesis file
doktorat Firek.pdf 18.71 MB
Citation count*1 (2020-08-30)

Get link to the record

Back
Confirmation
Are you sure?