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The regeneration of the ISFET structures after measurements with biological fluids

Joanna Eulalia Kiesiak

Abstract

The aim of this thesis was to examine the regeneration possibilities of the ISFET transistors after measuring them with biological substances. To ensure similar test conditions for structures, measurements of their current-voltage characteristics (I-V) were carried out. Then, based on the parameters, the structures were segregated into subgroups collecting transistors with similar parameters, further tests were performed on these groups. Transition medium of bovine serum albumin (BSA) was applied to the gate area of the transistors. Afterwards a transistor cleaning procedure was performed with native re-measurement output characteristics. Five different ways to clean the sensors were tested in the study. Measurements took place at the Institute of Microelectronics and Optoelectronics of the Warsaw University of Technology.
Diploma type
Engineer's / Bachelor of Science
Diploma type
Engineer's thesis
Author
Joanna Eulalia Kiesiak (FEIT/IRMT) Joanna Eulalia Kiesiak,, The Institute of Radioelectronics and Multimedia Technology (FEIT/IRMT)Faculty of Electronics and Information Technology (FEIT)
Title in Polish
Regeneracja struktur ISFET po pomiarach z użyciem płynów biologicznych
Supervisor
Piotr Firek (FEIT/MO) Piotr Firek,, The Institute of Microelectronics and Optoelectronics (FEIT/MO)Faculty of Electronics and Information Technology (FEIT)
Certifying unit
Faculty of Electronics and Information Technology (FEIT)
Affiliation unit
The Institute of Radioelectronics and Multimedia Technology (FEIT/IRMT)
Study subject / specialization
, Inżynieria Biomedyczna (Biomedical Engineering)
Language
(pl) Polish
Status
Finished
Defense Date
20-09-2019
Issue date (year)
2019
Reviewers
Piotr Firek (FEIT/MO) Piotr Firek,, The Institute of Microelectronics and Optoelectronics (FEIT/MO)Faculty of Electronics and Information Technology (FEIT) Bogumił Konarzewski (FEIT/IRMT) Bogumił Konarzewski,, The Institute of Radioelectronics and Multimedia Technology (FEIT/IRMT)Faculty of Electronics and Information Technology (FEIT)
Keywords in Polish
ISFET, struktura jonoczuła, charakterystyka prądowo-napięciowa, regeneracja, sensor
Keywords in English
ISFET, ion-sensitive structure, current-voltage characteristics, regeneration, sensor
Abstract in Polish
Celem niniejszej pracy inżynierskiej było zbadanie możliwości regeneracji tranzystorów ISFET po pomiarach substancji biologicznych. W celu zapewnienia zbliżonych warunków badań dla struktur, zostały przeprowadzone pomiary ich charakterystyk prądowo-napięciowych (I-V). Następnie na podstawie parametrów dokonano segregacji struktur na podgrupy zbierające tranzystory o zbliżonych parametrach, na tych grupach były wykonywane dalsze badania. Na obszar bramkowy tranzystorów nakładano medium roztworu surowiczej albuminy wołowej (BSA) i przeprowadzano procedurę czyszczenia tranzystora z ponownym pomiarem rodzimych charakterystyk wyjściowych. W badaniu testowano pięć różnych sposobów czyszczenia sensorów. Pomiary odbywały się w Instytucie Mikroelektroniki i Optoelektroniki Politechniki Warszawskiej.
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    Joanna_Kiesiak_praca_inzynierska.pdf
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Local fields
Identyfikator pracy APD: 36023

Uniform Resource Identifier
https://repo.pw.edu.pl/info/bachelor/WUT3239d5282af448d8982f4dc6a60b0038/
URN
urn:pw-repo:WUT3239d5282af448d8982f4dc6a60b0038

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