Large-signal modeling of on-wafer microwave transistors based on response surface methodology
Paweł Barmuta , G Avolio , F. Ferranti , Arkadiusz Lewandowski , Dominique M. M.-P. Schreurs
AbstractIn this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.
|Publication size in sheets||0.5|
|Book||Proceedings of IEEE MTT-S International Microwave Symposium (IMS), 2015, IEEE, ISBN 978-1-4799-8275-2, [Print ISSN: 0149-645X], 453 p.|
|Keywords in Polish||10.1109/MWSYM.2015.7167029|
|Score|| = 15.0, 10-03-2019, BookChapterMatConf|
= 15.0, 10-03-2019, BookChapterMatConf
|Citation count*||1 (2019-04-15)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.