Large-signal modeling of on-wafer microwave transistors based on response surface methodology

Paweł Barmuta , G Avolio , F. Ferranti , Arkadiusz Lewandowski , Dominique M. M.-P. Schreurs

Abstract

In this paper we extract the large-signal model of a microwave transistor by using the response surface methodology. This behavioral modeling approach combines design of experiments and automated model extraction. As case study we considered an on-wafer 0.15 μm GaAs pHEMT. The proposed model is compared with well-established Chalmers model. We show that a high level of accuracy can be achieved with response surface methodology. However, the methodology is computationally complex.
Author Paweł Barmuta (FEIT / PE)
Paweł Barmuta,,
- The Institute of Electronic Systems
, G Avolio
G Avolio,,
-
, F. Ferranti
F. Ferranti,,
-
, Arkadiusz Lewandowski (FEIT / PE)
Arkadiusz Lewandowski,,
- The Institute of Electronic Systems
, Dominique M. M.-P. Schreurs
Dominique M. M.-P. Schreurs,,
-
Pages1-4
Publication size in sheets0.5
Book Proceedings of IEEE MTT-S International Microwave Symposium (IMS), 2015, IEEE, ISBN 978-1-4799-8275-2, [Print ISSN: 0149-645X], 453 p.
Keywords in Polish10.1109/MWSYM.2015.7167029
DOIDOI:10.1109/MWSYM.2015.7167029
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConf
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConf
Citation count*1 (2018-11-19)
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