Silicon carbide Schottky barrier diodes in PWM voltage source inverters with MOSFETS - experimental investigations
Mieczysław Nowak , Roman Barlik , Piotr Grzejszczak , Jacek Rąbkowski
In the two connected and published in serial numbers papers the simulation and experimental results are presented in order to determine impact of silicon carbide devices on reduction of power losses in the power electronics equipment. In this first one the experimental investigations results of alone switches consist of low voltage MOSFETs and anti-parallel SiC Schottky diodes as well as complete three phase PWM low voltage inverters operating at switching frequency over 50 kHz (100V/500VA) have been presented. The experimentally determined switching and conducting losses show the good energetic properties of voltage source inverter built with MOSEFETs and SiC diodes. The simulating investigations of the 500VA and 5000VA inverters are the subject of the second paper which is published in this issue.
|Journal series||Przegląd Elektrotechniczny, ISSN 0033-2097, (A 15 pkt)|
|Publication indicators||= 0; = 0; : 2011 = 0.531; : 2011 = 0.244 (2)|
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