Silicon carbide Schottky barrier diodes in PWM voltage source inverters with MOSFETS - experimental investigations

Mieczysław Nowak , Roman Barlik , Piotr Grzejszczak , Jacek Rąbkowski

Abstract

In the two connected and published in serial numbers papers the simulation and experimental results are presented in order to determine impact of silicon carbide devices on reduction of power losses in the power electronics equipment. In this first one the experimental investigations results of alone switches consist of low voltage MOSFETs and anti-parallel SiC Schottky diodes as well as complete three phase PWM low voltage inverters operating at switching frequency over 50 kHz (100V/500VA) have been presented. The experimentally determined switching and conducting losses show the good energetic properties of voltage source inverter built with MOSEFETs and SiC diodes. The simulating investigations of the 500VA and 5000VA inverters are the subject of the second paper which is published in this issue.

Author Mieczysław Nowak (FoEE / ICIE)
Mieczysław Nowak,,
- The Institute of Control and Industrial Electronics
, Roman Barlik (FoEE / ICIE)
Roman Barlik,,
- The Institute of Control and Industrial Electronics
, Piotr Grzejszczak (FoEE / ICIE)
Piotr Grzejszczak,,
- The Institute of Control and Industrial Electronics
, Jacek Rąbkowski (FoEE / ICIE)
Jacek Rąbkowski,,
- The Institute of Control and Industrial Electronics
Journal seriesPrzegląd Elektrotechniczny, ISSN 0033-2097, (A 15 pkt)
Issue year2011
Vol87
Pages18-23
ASJC Classification2208 Electrical and Electronic Engineering
Languageen angielski
Score (nominal)15
Score sourcejournalList
Publication indicators Scopus Citations = 0; WoS Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2011 = 0.531; WoS Impact Factor: 2011 = 0.244 (2)
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