Properties of chemical vapor deposition graphene transferred by high-speed electrochemical delamination
Tymoteusz Ciuk , Iwona Pasternak , Aleksandra Krajewska , Jan Sobieski , Piotr Caban , Jan Szmidt , Włodek Strupiński
We report on the electrical characterization and Raman spectroscopy of chemical vapor deposition copper-grown graphene transferred onto a Si/SiO 2 substrate by high-speed (1 mm/s) electrochemical delamination. We determine graphene's sheet resistance, carrier mobility, and concentration as well as its physical quality as a function of the electolyte concentration. Graphene's electrical properties are investigated with standard Hall measurements in van der Pauw geometry and a contactless method that employs a single-post dielectric resonator operating at microwave frequencies. These properties are related to the widely used copper etching technique. The results prove that the high-speed electrochemical delamination provides good-quality graphene within a short time scale. © 2013 American Chemical Society.
|Journal series||The Journal of Physical Chemistry Part C: Nanomaterials, Interfaces and Hard Matter, ISSN 1932-7447, e-ISSN 1932-7455|
|Publication size in sheets||0.5|
|ASJC Classification||; ; ;|
|Score|| = 35.0, 02-09-2020, ArticleFromJournal|
= 35.0, 02-09-2020, ArticleFromJournal
|Publication indicators||= 46; = 53; = 65.0; : 2013 = 1.432; : 2013 = 4.835 (2) - 2013=5.241 (5)|
|Citation count*||65 (2020-09-21)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.