Hard and soft switching operation of the half-bridge based on 900V SiC MOSFETs

Anna Sarnowska , Jacek Rąbkowski

Abstract

This paper presents an experimental evaluation of the half-bridge converter based on new 900V SiC MOSFEs. The converter is tested with pure inductive load at various switching frequencies and power levels to test overall performance of the devices. Transistors operate as a part of different switch scenarios: MOSFET (with body diode), MOSFET+SiC Schottky and finally with additional parallel capacitors. All performed tests conform excellent performance of SiC transistors, however, an optimal configuration is with parallel capacitors. Near to ZVS conditions lead to reduction of transistor's power losses by 28 per cent.

Author Anna Sarnowska - [Warsaw University of Technology (PW), MNiSW [80]]
Anna Sarnowska,,
-
- Politechnika Warszawska
, Jacek Rąbkowski (FoEE / ICIE)
Jacek Rąbkowski,,
- The Institute of Control and Industrial Electronics
Journal seriesIECON Proceedings (Industrial Electronics Conference), (0 pkt)
Issue year2016
Pages7167-7172
DOIDOI:10.1109/IECON.2016.7793813
Languageen angielski
Score (nominal)0
Score sourcejournalList
ScoreMinisterial score = 0.0, 06-12-2019, ArticleFromJournal
Ministerial score (2013-2016) = 0.0, 06-12-2019, ArticleFromJournal
Publication indicators Scopus Citations = 2; WoS Citations = 2
Citation count*5 (2019-11-27)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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