Examinations of selected thermal properties of packages of SiC Schottky diodes

Damian Bisewski , Marcin Myśliwiec , Krzysztof Górecki , Ryszard Kisiel , Janusz Zarębski

Abstract

This paper describes the study of thermal properties of packages of silicon carbide Schottky diodes. In the paper the packaging process of Schottky diodes, the measuring method of thermal parameters, as well as the results of measurements are presented. The measured waveforms of transient thermal impedance of the examined diodes are compared with the waveforms of this parameter measured for commercially available Schottky diodes.
Author Damian Bisewski
Damian Bisewski,,
-
, Marcin Myśliwiec IMiO
Marcin Myśliwiec,,
- The Institute of Microelectronics and Optoelectronics
, Krzysztof Górecki
Krzysztof Górecki,,
-
, Ryszard Kisiel IMiO
Ryszard Kisiel,,
- The Institute of Microelectronics and Optoelectronics
, Janusz Zarębski
Janusz Zarębski,,
-
Journal seriesMetrology and Measurement Systems, ISSN 0860-8229
Issue year2016
Vol23
No3
Pages451-459
Publication size in sheets0.5
Keywords in EnglishSchottky diodes, transient thermal impedance, thermal measurements, silicon carbide, packaging
DOIDOI:10.1515/mms-2016-0033
URL www.metrology.pg.gda.pl
projectThe Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł, , Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
WEiTI Działalność statutowa
Languageen angielski
Score (nominal)20
ScoreMinisterial score = 20.0, 27-03-2017, ArticleFromJournal
Ministerial score (2013-2016) = 20.0, 27-03-2017, ArticleFromJournal
Publication indicators WoS Impact Factor: 2016 = 1.598 (2) - 2016=1.203 (5)
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