Quasi-Free-Standing Bilayer Graphene Hall-Effect Sensor
Maciej Kachniarz , Oleg Petruk , Włodzimierz Strupiński , Tymoteusz Ciuk , Adam Bieńkowski , Roman Szewczyk , Jacek Salach
AbstractThis paper presents recent progress in the development of the new type of Hall-effect sensor with the graphene layer acting as sensing material. Newly developed Hall-effect sensor is made of quasi-free-standing bilayer graphene structure. The graphene structure is placed inside the standard QFN-32 package for integrated circuits and mounted on the miniature printed circuit board with four leads, which allowed obtaining operational magnetic field sensor. Basic functional properties of the developed sensor were investigated as well as time drift and temperature dependence of these parameters. Performed investigation indicates high linearity of the sensor within the tested range of an external magnetic field. The measured current-related sensitivity of the sensor is about 50 V/AT, without any amplification of the output signal from the graphene structure. Also, long-term tests of sensitivity and offset voltage were performed. The results indicate high stability of the investigated parameters within long time. Obtained results are very promising and indicate the possibility of utilization of the developed sensor in measurement application.
|Journal series||IEEE Transactions on Magnetics, ISSN 0018-9464|
|Pages||4000204-1 - 4000204-4|
|Publication size in sheets||0.3|
|Conference||12th European Magnetic Sensor and Actuators Conference (EMSA 2018), 01-07-2018 - 04-07-2018, Ateny, Grecja|
|Keywords in English||graphene, Hall-effect, magnetic field sensor, magnetic measurements|
|Score||= 70.0, 08-06-2020, ArticleFromJournal|
|Publication indicators||= 1; = 1.0; = 2; : 2018 = 0.996; : 2018 = 1.651 (2) - 2018=1.588 (5)|
|Citation count*||1 (2019-05-23)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.