Selection of power switches designed for applying in a dual active bridge 300VDC/100kHz

Mieczysław Nowak , Piotr Grzejszczak , Mariusz Zdanowski , Roman Barlik

Abstract

In this paper a study of the transistors selection suitable for a high voltage 300V bridge, being part of a laboratory prototype of a bidirectional dc/dc interface (DAB) working with the frequency of 100 kHz, is presented. The basis for this selection is the minimum energy lost in the inverter switches. For the group of fast switching IGBTs and different types of high voltage MOSFETs (as CoolMOS, MDmeshMOS and others) available in the market energy losses were estimated. In the case of conducting losses, the simulation model based on a data sheet parameter was used and the switching losses were measured in a laboratory.

Author Mieczysław Nowak (FoEE / ICIE)
Mieczysław Nowak,,
- The Institute of Control and Industrial Electronics
, Piotr Grzejszczak (FoEE / ICIE)
Piotr Grzejszczak,,
- The Institute of Control and Industrial Electronics
, Mariusz Zdanowski (FoEE / ICIE)
Mariusz Zdanowski,,
- The Institute of Control and Industrial Electronics
, Roman Barlik (FoEE / ICIE)
Roman Barlik,,
- The Institute of Control and Industrial Electronics
Journal seriesPrzegląd Elektrotechniczny, ISSN 0033-2097, (A 15 pkt)
Issue year2011
Vol87
Pages60-63
ASJC Classification2208 Electrical and Electronic Engineering
Languageen angielski
Score (nominal)15
Score sourcejournalList
Publication indicators Scopus Citations = 0; WoS Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2011 = 0.531; WoS Impact Factor: 2011 = 0.244 (2)
Citation count*
Cite
Share Share

Get link to the record


* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
Back
Confirmation
Are you sure?