Selection of power switches designed for applying in a dual active bridge 300VDC/100kHz
Mieczysław Nowak , Piotr Grzejszczak , Mariusz Zdanowski , Roman Barlik
In this paper a study of the transistors selection suitable for a high voltage 300V bridge, being part of a laboratory prototype of a bidirectional dc/dc interface (DAB) working with the frequency of 100 kHz, is presented. The basis for this selection is the minimum energy lost in the inverter switches. For the group of fast switching IGBTs and different types of high voltage MOSFETs (as CoolMOS, MDmeshMOS and others) available in the market energy losses were estimated. In the case of conducting losses, the simulation model based on a data sheet parameter was used and the switching losses were measured in a laboratory.
|Journal series||Przegląd Elektrotechniczny, ISSN 0033-2097, (A 15 pkt)|
|Publication indicators||= 0; = 0; : 2011 = 0.531; : 2011 = 0.244 (2)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.