Effect of ultra-shallow F/N ions implantation on electrical parameters of MIS structures based on HfOx gate dielectrics

Robert Paweł Mroczyński , Małgorzata Kalisz , Magdalena Dominik


K P1.10
Author Robert Paweł Mroczyński (FEIT / MO)
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Małgorzata Kalisz - Instytut Transportu Samochodowego
Małgorzata Kalisz,,
, Magdalena Dominik (FEIT / MO)
Magdalena Dominik,,
- The Institute of Microelectronics and Optoelectronics
Publication size in sheets0.3
Book Stellacci Francesco, Pan Fusheng, Kiriakidis George, Morante Joan Ramon, Stevens Molly (eds.): E-MRS Spring Meeting 2016, 2016, Strasbourg, France, EMRS, 550 p.
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 04-09-2019, BookChapterMatConfByConferenceseries
Ministerial score (2013-2016) = 15.0, 04-09-2019, BookChapterMatConfByConferenceseries
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