Effect of ultra-shallow F/N ions implantation on electrical parameters of MIS structures based on HfOx gate dielectrics

Robert Paweł Mroczyński , Małgorzata Kalisz , Magdalena Dominik

Abstract

K P1.10
Author Robert Paweł Mroczyński IMiO
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Małgorzata Kalisz - Instytut Transportu Samochodowego
Małgorzata Kalisz,,
-
, Magdalena Dominik IMiO
Magdalena Dominik,,
- The Institute of Microelectronics and Optoelectronics
Pages163-163
Publication size in sheets0.3
Book Stellacci Francesco, Pan Fusheng, Kiriakidis George, Morante Joan Ramon, Stevens Molly (eds.): E-MRS Spring Meeting 2016, 2016, EMRS, 550 p.
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConf
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConf
Citation count*0
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