Design and construction of the H-bridge inverter using Gallium Nitride (GaN) gate injection transistor

Jacek Rąbkowski

Abstract

The paper discuses issues related to design and construction of the H-bridge inverter using Gallium Nitride (GaN) Gate Injection Transistors (GIT). Basic features of the transistors are shown together with gate driver topics. Then, a laboratory model of the 2kVA inverter operating at switching frequency of 250 kHz is presented. The paper is illustrated with experimental results.

Author Jacek Rąbkowski (FoEE / ICIE)
Jacek Rąbkowski,,
- The Institute of Control and Industrial Electronics
Journal seriesPrzegląd Elektrotechniczny, ISSN 0033-2097, (B 14 pkt)
Issue year2016
Vol92
Pages45-48
Publication size in sheets0.5
ASJC Classification2208 Electrical and Electronic Engineering
DOIDOI:10.15199/48.2016.05.09
Languageen angielski
Score (nominal)14
Score sourcejournalList
ScoreMinisterial score = 14.0, 28-10-2019, ArticleFromJournal
Ministerial score (2013-2016) = 14.0, 28-10-2019, ArticleFromJournal
Publication indicators Scopus Citations = 4; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.439; WoS Impact Factor: 2011 = 0.244 (2)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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