Design and construction of the H-bridge inverter using Gallium Nitride (GaN) gate injection transistor
The paper discuses issues related to design and construction of the H-bridge inverter using Gallium Nitride (GaN) Gate Injection Transistors (GIT). Basic features of the transistors are shown together with gate driver topics. Then, a laboratory model of the 2kVA inverter operating at switching frequency of 250 kHz is presented. The paper is illustrated with experimental results.
|Journal series||Przegląd Elektrotechniczny, ISSN 0033-2097, (B 14 pkt)|
|Publication size in sheets||0.5|
|Score|| = 14.0, 28-10-2019, ArticleFromJournal|
= 14.0, 28-10-2019, ArticleFromJournal
|Publication indicators||= 4; : 2016 = 0.439; : 2011 = 0.244 (2)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.