The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface
Krystian Bogumił Król , Małgorzata Kalisz , Mariusz Sochacki , Jan Szmidt
AbstractThe effect of the n-type 4H-SiC (0001) oxidation in wet O2 at temperature of 1175 °C followed by low temperature annealing in N2O at temperature of 800C for 2 or 4 hours followed by high temperature annealing in nitrogen ambient on nitrogen distribution in silicon dioxide was investigated. It was shown that the oxidation and annealing have a strong impact on the behavior of electrical parameters of MOS capacitors using the oxides as gate dielectric what is probably an effect of nitrogen incorporation. The explanation of the observed electrical properties is included.
|Journal series||Materials Science Forum, ISSN 0255-5476|
|Publication size in sheets||0.5|
|Keywords in English||oxide, high temperature oxidation, post-oxidation annealing|
|ASJC Classification||; ; ;|
|Score|| = 0.0, 30-01-2020, ArticleFromJournal|
= 5.0, 30-01-2020, ArticleFromJournal
|Publication indicators||= 1; = 1; : 2013 = 0.334|
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