The Influence of Post-Oxidation Annealing Process in O2 and N2O on the Quality of Al/SiO2/n-Type 4H-SiC MOS Interface

Krystian Bogumił Król , Małgorzata Kalisz , Mariusz Sochacki , Jan Szmidt


The effect of the n-type 4H-SiC (0001) oxidation in wet O2 at temperature of 1175 °C followed by low temperature annealing in N2O at temperature of 800C for 2 or 4 hours followed by high temperature annealing in nitrogen ambient on nitrogen distribution in silicon dioxide was investigated. It was shown that the oxidation and annealing have a strong impact on the behavior of electrical parameters of MOS capacitors using the oxides as gate dielectric what is probably an effect of nitrogen incorporation. The explanation of the observed electrical properties is included.
Author Krystian Bogumił Król (FEIT / MO) - [Tele- and Radio Research Institute (ITR)]
Krystian Bogumił Król,,
- The Institute of Microelectronics and Optoelectronics
- Instytut Tele- i Radiotechniczny
, Małgorzata Kalisz - Instytut Transportu Samochodowego [Instytut Transportu Samochodowego, Warsaw]
Małgorzata Kalisz,,
, Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Jan Szmidt (FEIT / MO)
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesMaterials Science Forum, ISSN 0255-5476
Issue year2013
Publication size in sheets0.5
Keywords in Englishoxide, high temperature oxidation, post-oxidation annealing
ASJC Classification2210 Mechanical Engineering; 2211 Mechanics of Materials; 3104 Condensed Matter Physics; 2500 General Materials Science
Languageen angielski
Score (nominal)5
Score sourcejournalList
ScoreMinisterial score = 0.0, 30-01-2020, ArticleFromJournal
Ministerial score (2013-2016) = 5.0, 30-01-2020, ArticleFromJournal
Publication indicators Scopus Citations = 1; WoS Citations = 1; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 0.334
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