High Q-Factor Millimeter-Wave Silicon Resonators
Jerzy Krupka , Paweł Kamiński , Leif Jensen
AbstractResonators made of high-resistivity silicon (HRS) have been manufactured, and their characteristics were measured at a frequency range from 20 to 50 GHz. To study the influence of the material resistivity on Q-factor values, two HRSs were used. The first one was as-grown high-purity floating zone (FZ) silicon with a resistivity of ∼70 kΩ ⋅ cm. The second was FZ silicon irradiated with high-energy protons. The resistivity of the irradiated silicon was essentially the same as that of intrinsic silicon with a resistivity of ∼400 kΩ ⋅ cm at room temperature. Several whispering gallery modes were identified and measured on disk shape samples made on both materials. At room temperature and at a frequency of 50 GHz, the Q-factor values for the resonators made of the as-grown and the irradiated silicon are up to 1.8×104 and up to 6×104 , respectively.
|Journal series||IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480|
|Keywords in English||whispering gallery modes (WGMs), Complex permittivity, dielectric resonator, resistivity, semi-insulating silicon|
|project||The Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł,
, Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
|Score|| = 35.0, 27-03-2017, ArticleFromJournal|
= 35.0, 27-03-2017, ArticleFromJournal
|Publication indicators||: 2016 = 2.897 (2) - 2016=3.26 (5)|
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