Manufacturing Microwave AlGaN/Gan High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates

Anna Piotrowska , Eliana Kamińska , Wojciech Wojtasiak , Wojciech Gwarek , Robert Kucharski , Marcin Zając , Paweł Prystawko , Marek Ekielski , Jakub Kaczmarski , Maciej Kozubal , Artur Trajnerowicz , Andrzej Taube

Abstract

n/a
Author Anna Piotrowska - [Institute of Electron Technology (ITE)]
Anna Piotrowska,,
-
- Instytut Technologii Elektronowej
, Eliana Kamińska - [Institute of Electron Technology (ITE)]
Eliana Kamińska,,
-
- Instytut Technologii Elektronowej
, Wojciech Wojtasiak IRTM
Wojciech Wojtasiak,,
- The Institute of Radioelectronics and Multimedia Technology
, Wojciech Gwarek IRTM
Wojciech Gwarek,,
- The Institute of Radioelectronics and Multimedia Technology
, Robert Kucharski - AMMONO S.A. (AMMONO S.A.)
Robert Kucharski,,
-
, Marcin Zając - AMMONO S.A. (AMMONO S.A.)
Marcin Zając,,
-
, Paweł Prystawko - Instytut Fizyki Wysokich Ciśnień, TOP-GAN Sp. z o.o. (TOP-GAN Sp. z o.o.)
Paweł Prystawko,,
-
, Marek Ekielski - Institute of Electron Technology (ITE)
Marek Ekielski,,
-
, Jakub Kaczmarski - [Institute of Electron Technology (ITE)]
Jakub Kaczmarski,,
-
- Instytut Technologii Elektronowej
, Maciej Kozubal - Institute of Electron Technology (ITE)
Maciej Kozubal,,
-
et al.
Pages77-84
Publication size in sheets0.5
Book Dudley M., Bakowski M., Ohtani N., Shenai K., Raghothamachar B. (eds.): Gallium Nitride and Silicon Carbide Power Technologies 6, 2016, The Electrochemical Society, ISBN 978-1-62332-371-4, [978-1-60768-729-0]
DOIDOI:10.1149/07512.0077ecst
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 28-03-2017, BookChapterMatConf
Ministerial score (2013-2016) = 15.0, 28-03-2017, BookChapterMatConf
Citation count*0
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