Investigation of one-dimensionally disordered structures of AIIBVI crystals by Monte Carlo technique. I. The 3C disordered structure and the 3C structure with different kinds of stacking faults

Jacek Gosk

Abstract

The Monte Carlo computer simulation technique is applied to investigate one-dimensionally disordered (ODD) structures in AIIBVI compounds. Computed diffracted intensities for 3C disordered structure (3C/DS) with various frequency functions of fault to fault distances have shown a strong intensity distribution dependence upon the frequency function. Distinctive features of the diffraction patterns along the 10.L reciprocal lattice row corresponding to different kinds of faults in 3C structure are discussed. In particular, both random as well as non-random distribution of stacking faults (SFs) are considered.
Author Jacek Gosk (FP / SSID)
Jacek Gosk,,
- Solid State Ionics Division
Journal seriesCrystal Research and Technology, ISSN 1521-4079, [0232-1300]
Issue year2000
Vol35
No1
Pages101-116
Publication size in sheets0.75
ASJC Classification3104 Condensed Matter Physics; 2500 General Materials Science; 1600 General Chemistry
DOIDOI:10.1002/(SICI)1521-4079(200001)35:1<101::AID-CRAT101>3.0.CO;2-O
Languageen angielski
Score (nominal)20
Score sourcejournalList
Publication indicators Scopus Citations = 15; WoS Citations = 14; Scopus SNIP (Source Normalised Impact per Paper): 2000 = 0.641; WoS Impact Factor: 2013 = 1.164 (2) - 2013=1.046 (5)
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