Investigation of one-dimensionally disordered structures of AIIBVI crystals by Monte Carlo technique. I. The 3C disordered structure and the 3C structure with different kinds of stacking faults
AbstractThe Monte Carlo computer simulation technique is applied to investigate one-dimensionally disordered (ODD) structures in AIIBVI compounds. Computed diffracted intensities for 3C disordered structure (3C/DS) with various frequency functions of fault to fault distances have shown a strong intensity distribution dependence upon the frequency function. Distinctive features of the diffraction patterns along the 10.L reciprocal lattice row corresponding to different kinds of faults in 3C structure are discussed. In particular, both random as well as non-random distribution of stacking faults (SFs) are considered.
|Journal series||Crystal Research and Technology, ISSN 1521-4079, [0232-1300]|
|Publication size in sheets||0.75|
|ASJC Classification||; ;|
|Publication indicators||= 15; = 14; : 2000 = 0.641; : 2013 = 1.164 (2) - 2013=1.046 (5)|
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