A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors
Georg Tolstoy , Dimosthenis Peftitsis , Jacek Rąbkowski , Hans-Peter Nee , Patrick R. Palmer
Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.
|Journal series||2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013|
|Publication size in sheets||0.5|
|Score|| = 0.0, 24-09-2020, ArticleFromJournal|
= 0.0, 24-09-2020, ArticleFromJournal
|Publication indicators||= 2; = 0; = 35.0|
|Citation count*||35 (2020-09-16)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.