A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors

Georg Tolstoy , Dimosthenis Peftitsis , Jacek Rąbkowski , Hans-Peter Nee , Patrick R. Palmer

Abstract

Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.

Author Georg Tolstoy - [The Royal Institute of Technology (KTH)]
Georg Tolstoy,,
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, Dimosthenis Peftitsis - [The Royal Institute of Technology (KTH)]
Dimosthenis Peftitsis,,
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, Jacek Rąbkowski (FoEE / ICIE)
Jacek Rąbkowski,,
- The Institute of Control and Industrial Electronics
, Hans-Peter Nee - [The Royal Institute of Technology (KTH)]
Hans-Peter Nee,,
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, Patrick R. Palmer - [University of Cambridge]
Patrick R. Palmer,,
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Journal series2013 IEEE ECCE Asia Downunder - 5th IEEE Annual International Energy Conversion Congress and Exhibition, IEEE ECCE Asia 2013
Issue year2013
Pages728-735
Publication size in sheets0.5
DOIDOI:10.1109/ECCE-Asia.2013.6579182
Languageen angielski
Score (nominal)0
Score sourcejournalList
ScoreMinisterial score = 0.0, 24-09-2020, ArticleFromJournal
Ministerial score (2013-2016) = 0.0, 24-09-2020, ArticleFromJournal
Publication indicators Scopus Citations = 2; WoS Citations = 0; GS Citations = 35.0
Citation count*35 (2020-09-16)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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