Influence of nitrogen implantation on electrical properties of Al/SiO2/4H-SiC MOS structure

Krystian Bogumił Król , Mariusz Sochacki , Marcin Turek , Jerzy Żuk , Henryk M. Przewłocki , T. Gutt , Paweł Borowicz , Marek Guziewicz , Jacek Szuber , Monika Kwoka , Piotr Kościelniak , Jan Szmidt

Abstract

An influence of nitrogen implantation dose on the properties of MOS structure is analyzed. The properties are investigated using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that the trap density is derectly related to implantation damage and conditions.
Author Krystian Bogumił Król (FEIT / MO)
Krystian Bogumił Król,,
- The Institute of Microelectronics and Optoelectronics
, Mariusz Sochacki (FEIT / MO)
Mariusz Sochacki,,
- The Institute of Microelectronics and Optoelectronics
, Marcin Turek - [Maria Curie-Sklodowska University in Lublin]
Marcin Turek,,
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, Jerzy Żuk - [Maria Curie-Sklodowska University in Lublin]
Jerzy Żuk,,
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, Henryk M. Przewłocki
Henryk M. Przewłocki,,
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, T. Gutt - [Instytut Technologii Elektronowej]
T. Gutt,,
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, Paweł Borowicz - [Instytut Technologii Elektronowej]
Paweł Borowicz,,
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, Marek Guziewicz - Institute of Electron Technology (ITE) [Instytut Technologii Elektronowej]
Marek Guziewicz,,
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, Jacek Szuber - [Politechnika Slaska w Gliwicach]
Jacek Szuber,,
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, Monika Kwoka - [Politechnika Slaska w Gliwicach]
Monika Kwoka,,
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et al.`
Journal seriesMaterials Science Forum, ISSN 0255-5476
Issue year2013
No740-742
Pages733-736
Publication size in sheets0.5
Keywords in Englishsilicon carbide, thermal oxidation, ion implantation, ion implantation damage
ASJC Classification2210 Mechanical Engineering; 2211 Mechanics of Materials; 3104 Condensed Matter Physics; 2500 General Materials Science
DOIDOI:10.4028/www.scientific.net/MSF.740-742.733
URL http://www.scientific.net/MSF.740-742.733
Languageen angielski
Score (nominal)5
Score sourcejournalList
ScoreMinisterial score = 0.0, 12-02-2020, ArticleFromJournal
Ministerial score (2013-2016) = 5.0, 12-02-2020, ArticleFromJournal
Publication indicators Scopus Citations = 2; WoS Citations = 3; GS Citations = 4.0; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 0.334
Citation count*4 (2020-09-19)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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