Influence of packaging processes and temperature on characteristics of Schottky diodes made of SiC

Paweł Górecki , Marcin Myśliwiec , Krzysztof Górecki , Ryszard Kisiel

Abstract

In the paper findings concerning laboratory-structures of Schottky diodes made of silicon carbide are presented. Special attention is paid to influence of the mounting process of diode structures in packages worked out in Warsaw University of Technology and influence of ambient temperature and self-heating phenomena on dc characteristics of the examined diodes. It is shown that high-temperature technological operations can influence the course of characteristics of these diodes, and that self-heating phenomena can visibly change the shape of characteristics of the considered devices. Thermal parameters of these diodes are also measured. The performed measurements prove that constructions of the packages worked out by the authors allow the considered diodes to operate at internal temperatures exceeding even 350°C.
Author Paweł Górecki
Paweł Górecki,,
-
, Marcin Myśliwiec (FEIT / MO)
Marcin Myśliwiec,,
- The Institute of Microelectronics and Optoelectronics
, Krzysztof Górecki - Akademia Morska w Gdyni
Krzysztof Górecki,,
-
, Ryszard Kisiel (FEIT / MO)
Ryszard Kisiel,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesIEEE Transactions on Components Packaging and Manufacturing Technology, ISSN 2156-3950, (A 25 pkt)
Issue year2019
Noin press
Pages1-8
ASJC Classification2208 Electrical and Electronic Engineering; 2209 Industrial and Manufacturing Engineering; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1109/TCPMT.2019.2894970
URL https://ieeexplore.ieee.org/document/8625506
Languageen angielski
Score (nominal)25
ScoreMinisterial score = 25.0, 04-09-2019, ArticleFromJournal
Publication indicators WoS Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2017 = 1.183; WoS Impact Factor: 2017 = 1.66 (2) - 2017=1.662 (5)
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