Influence of packaging processes and temperature on characteristics of Schottky diodes made of SiC
Paweł Górecki , Marcin Myśliwiec , Krzysztof Górecki , Ryszard Kisiel
AbstractIn the paper findings concerning laboratory-structures of Schottky diodes made of silicon carbide are presented. Special attention is paid to influence of the mounting process of diode structures in packages worked out in Warsaw University of Technology and influence of ambient temperature and self-heating phenomena on dc characteristics of the examined diodes. It is shown that high-temperature technological operations can influence the course of characteristics of these diodes, and that self-heating phenomena can visibly change the shape of characteristics of the considered devices. Thermal parameters of these diodes are also measured. The performed measurements prove that constructions of the packages worked out by the authors allow the considered diodes to operate at internal temperatures exceeding even 350°C.
|Journal series||IEEE Transactions on Components Packaging and Manufacturing Technology, ISSN 2156-3950, (N/A 70 pkt)|
|ASJC Classification||; ;|
|Score||= 70.0, 23-09-2019, ArticleFromJournal|
|Publication indicators||= 0; : 2017 = 1.183; : 2017 = 1.66 (2) - 2017=1.662 (5)|
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