Double-pulse characterization of GaN-on-Sapphire FETs for technology development

Gian Piero Gibiino , Paweł Barmuta , Rafael Cignani , Daniel Niessen , Arkadiusz Lewandowski , Lech Dobrzański , Dominique Chreurs , Alberto Santarelli

Abstract

A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 � m GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.
Author Gian Piero Gibiino - [Alma Mater Studiorum Universita di Bologna]
Gian Piero Gibiino,,
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, Paweł Barmuta (FEIT / PE)
Paweł Barmuta,,
- The Institute of Electronic Systems
, Rafael Cignani - [Alma Mater Studiorum Universita di Bologna]
Rafael Cignani,,
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, Daniel Niessen - [Alma Mater Studiorum Universita di Bologna]
Daniel Niessen,,
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, Arkadiusz Lewandowski (FEIT / PE)
Arkadiusz Lewandowski,,
- The Institute of Electronic Systems
, Lech Dobrzański - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Lech Dobrzański,,
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, Dominique Chreurs
Dominique Chreurs,,
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, Alberto Santarelli - [Alma Mater Studiorum Universita di Bologna]
Alberto Santarelli,,
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Pages1-4
Publication size in sheets0.5
Book Organizing Committee of Conference MIKON: Proc. 21st International Conference on Microwaves, Radar and Wireless Communications, 2016, USA, IEEE, ISBN 9781509022151, 732 p.
Keywords in EnglishField effect transistors, Gallium nitride, Tech- nology evaluation, Pulse measuremen
DOIDOI:10.1109/MIKON.2016.7492072
URL http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7492072&filter%3DAND%28p_IS_Number%3A7491934%29%26pageNumber%3D6
Languageen angielski
File
LewandowskiA_Barmuta.pdf 1,023.62 KB
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 19-12-2019, BookChapterMatConfByConferenceseries
Ministerial score (2013-2016) = 15.0, 19-12-2019, BookChapterMatConfByConferenceseries
Publication indicators Scopus Citations = 0; WoS Citations = 0
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