Double-pulse characterization of GaN-on-Sapphire FETs for technology development

Gian Piero Gibiino , Paweł Barmuta , Rafael Cignani , Daniel Niessen , Arkadiusz Lewandowski , Lech Dobrzański , Dominique Chreurs , Alberto Santarelli


A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 � m GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.
Author Gian Piero Gibiino
Gian Piero Gibiino,,
, Paweł Barmuta ISE
Paweł Barmuta,,
- The Institute of Electronic Systems
, Rafael Cignani
Rafael Cignani,,
, Daniel Niessen
Daniel Niessen,,
, Arkadiusz Lewandowski ISE
Arkadiusz Lewandowski,,
- The Institute of Electronic Systems
, Lech Dobrzański
Lech Dobrzański,,
, Dominique Chreurs
Dominique Chreurs,,
, Alberto Santarelli
Alberto Santarelli,,
Publication size in sheets0.5
Book Organizing Committee of Conference MIKON: Proc. 21st International Conference on Microwaves, Radar and Wireless Communications, 2016, IEEE, ISBN 9781509022151, 732 p.
Keywords in EnglishField effect transistors, Gallium nitride, Tech- nology evaluation, Pulse measuremen
Languageen angielski
LewandowskiA_Barmuta.pdf 1,023.62 KB
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConf
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConf
Citation count*0 (2018-07-19)
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