Double-pulse characterization of GaN-on-Sapphire FETs for technology development
Gian Piero Gibiino , Paweł Barmuta , Rafael Cignani , Daniel Niessen , Arkadiusz Lewandowski , Lech Dobrzański , Dominique Chreurs , Alberto Santarelli
AbstractA recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 � m GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.
|Publication size in sheets||0.5|
|Book||Organizing Committee of Conference MIKON: Proc. 21st International Conference on Microwaves, Radar and Wireless Communications, 2016, IEEE, ISBN 9781509022151, 732 p.|
|Keywords in English||Field effect transistors, Gallium nitride, Tech- nology evaluation, Pulse measuremen|
|Score|| = 15.0, 27-03-2017, BookChapterMatConf|
= 15.0, 27-03-2017, BookChapterMatConf
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