Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview

Dimosthenis Peftitsis , Jacek Rąbkowski

Abstract

n/a
Author Dimosthenis Peftitsis - Norvegian University of Science and Technology
Dimosthenis Peftitsis,,
-
, Jacek Rąbkowski ISEP
Jacek Rąbkowski,,
- The Institute of Control and Industrial Electronics
Journal seriesIEEE Transactions on Power Electronics, ISSN 0885-8993
Issue year2016
Vol31
Pages7194-7213
DOIDOI:10.1109/TPEL.2015.2510425
Languageen angielski
Score (nominal)45
ScoreMinisterial score = 45.0, 28-11-2017, ArticleFromJournal
Ministerial score (2013-2016) = 45.0, 28-11-2017, ArticleFromJournal
Publication indicators WoS Impact Factor: 2016 = 7.151 (2) - 2016=7.71 (5)
Citation count*22 (2018-02-19)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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