Gate and Base Drivers for Silicon Carbide Power Transistors: An Overview

Dimosthenis Peftitsis , Jacek Rąbkowski

Abstract

n/a
Author Dimosthenis Peftitsis - Norvegian University of Science and Technology [Swiss Federal Institute of Technology in Zurich (ETH Zürich)]
Dimosthenis Peftitsis,,
-
- Eidgenössische Technische Hochschule Zürich
, Jacek Rąbkowski (FoEE / ICIE)
Jacek Rąbkowski,,
- The Institute of Control and Industrial Electronics
Journal seriesIEEE Transactions on Power Electronics, ISSN 0885-8993
Issue year2016
Vol31
Pages7194-7213
ASJC Classification2208 Electrical and Electronic Engineering
DOIDOI:10.1109/TPEL.2015.2510425
Languageen angielski
Score (nominal)45
Score sourcejournalList
ScoreMinisterial score = 45.0, 30-06-2020, ArticleFromJournal
Ministerial score (2013-2016) = 45.0, 30-06-2020, ArticleFromJournal
Publication indicators WoS Citations = 42; Scopus Citations = 53; GS Citations = 47.0; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 3.589; WoS Impact Factor: 2016 = 7.151 (2) - 2016=7.71 (5)
Citation count*47 (2019-05-05)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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