SiC Mosfet versus Si IGBT based H-Bridge quasi Z Source converter

Tomasz Gajowik , Kamil Możdżyński , Mariusz Malinowski , Haitham Abu Rub , Khalid Ghazi

Abstract

n/a
Author Tomasz Gajowik (FoEE / ICIE)
Tomasz Gajowik,,
- The Institute of Control and Industrial Electronics
, Kamil Możdżyński (FoEE / ICIE)
Kamil Możdżyński,,
- The Institute of Control and Industrial Electronics
, Mariusz Malinowski (FoEE / ICIE)
Mariusz Malinowski,,
- The Institute of Control and Industrial Electronics
, Haitham Abu Rub - TA&M at Qatar [Texas A and M University at Qatar]
Haitham Abu Rub,,
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, Khalid Ghazi - TA&M at Qatar [Texas A and M University at Qatar]
Khalid Ghazi,,
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Pages1-5
Book 12th IEEE International Conference on Compatibility, Power Electronics and Power Engineering, vol. 5, 2018, ISBN 978-1-5386-2508-8
DOIDOI:10.1109/CPE.2018.8372612
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 25-09-2019, BookChapterMatConfByConferenceseries
Ministerial score (2013-2016) = 15.0, 25-09-2019, BookChapterMatConfByConferenceseries
Publication indicators WoS Citations = 0; Scopus Citations = 0
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