Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiOxNy/HfOx Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma

Robert Paweł Mroczyński , Jakub Maciej Jasiński


Ultra‐shallow fluorine implantation from radio frequency (RF) plasma performed in reactive ion etching (RIE) reactor at room temperature (RT) is adopted to metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) technology on silicon (Si) substrates with gate‐last low‐temperature SiOxNy/HfOx double‐gate dielectric stack. The implantation technology is optimized in order to get the maximum fluorine concentration very close to the silicon sub‐surface region. The electrical characterization of fabricated structures reveals an improved quality of the semiconductor/dielectric interface, i.e., lower interface state density (Nit), effective charge (Qeff) and, as a consequence, enhanced mobility (μeff) value and lower sub‐threshold swing (SS) of the investigated MOSFETs. The presented findings are promising for possible applications of fluorine implantation from RF plasma in modern semiconductor devices.
Author Robert Paweł Mroczyński (FEIT / MO)
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Jakub Maciej Jasiński (FEIT / MO)
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesPhysica Status Solidi-Rapid Research Letters, ISSN 1862-6254, (A 30 pkt)
Issue year2018
Publication size in sheets0.5
ASJC Classification3104 Condensed Matter Physics; 2500 General Materials Science
URL https://onlinelibrary.wiley.com/doi/abs/10.1002/pssr.201800152
Languageen angielski
Score (nominal)35
ScoreMinisterial score = 30.0, 11-03-2019, ArticleFromJournal
Ministerial score (2013-2016) = 35.0, 11-03-2019, ArticleFromJournal
Publication indicators Scopus Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 1.141; WoS Impact Factor: 2017 = 3.721 (2) - 2017=2.694 (5)
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