Electro‐Physical Properties of Gate‐Last Silicon MOSFETs with Low‐Temperature SiOxNy/HfOx Stack After Ultra‐Shallow Fluorine Implantation from RF Plasma
Robert Paweł Mroczyński , Jakub Maciej Jasiński
AbstractUltra‐shallow fluorine implantation from radio frequency (RF) plasma performed in reactive ion etching (RIE) reactor at room temperature (RT) is adopted to metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) technology on silicon (Si) substrates with gate‐last low‐temperature SiOxNy/HfOx double‐gate dielectric stack. The implantation technology is optimized in order to get the maximum fluorine concentration very close to the silicon sub‐surface region. The electrical characterization of fabricated structures reveals an improved quality of the semiconductor/dielectric interface, i.e., lower interface state density (Nit), effective charge (Qeff) and, as a consequence, enhanced mobility (μeff) value and lower sub‐threshold swing (SS) of the investigated MOSFETs. The presented findings are promising for possible applications of fluorine implantation from RF plasma in modern semiconductor devices.
|Journal series||Physica Status Solidi-Rapid Research Letters, ISSN 1862-6254, (A 30 pkt)|
|No||16 May 2018|
|Publication size in sheets||0.5|
|Score|| = 30.0, 29-05-2018, ArticleFromJournal|
= 35.0, 29-05-2018, ArticleFromJournal
|Publication indicators||: 2016 = 3.032 (2) - 2016=2.447 (5)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.