Thermal stability of deposited by means of RF reactive magnetron sputtering hafnium oxide (HfOx) and hafnium oxynitride (HfOxNy) thin films

Robert Paweł Mroczyński , Magdalena Dominik


Author Robert Paweł Mroczyński (FEIT / MO)
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Magdalena Dominik (FEIT / MO)
Magdalena Dominik,,
- The Institute of Microelectronics and Optoelectronics
Publication size in sheets0.3
Book Wiśniowski Piotr (eds.): Materiały Konferencyjne: XII Konferencja Naukowa Technologia Elektronowa, ELTE '2016, vol. PenDrive, 2016, Kraków, Polska, Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica, 226 p.
Keywords in EnglishHfOx, HfOxNy, MOS/MIS, electrical characterization
Project[2011/01/D/ST7/00640] Ultra-shallow plasma ion implantation for technology of advanced MOS/MOSFET structures fabricated on silicon and silicon carbide - characterization of phenomenon, attempts for technological optimization. Project leader: Kalisz Małgorzata, application date 03-06-2011, start date 07-12-2011, planned end date 06-12-2016, end date 06-06-2017, IMiO/2011/NCN/1, Completed
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 04-02-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 04-02-2020, BookChapterMatConfByIndicator
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