Effect of nanocrystal geometric location on tunnel currents and small-signal admittance of MIS structures

Andrzej Igor Mazurak , Jakub Maciej Jasiński , Bogdan Majkusiak


In this paper, basing on a theoretical model of the ncMIS (nanocrystal metal-insulator-semiconductor) structure, in which nanocrystals embedded in the insulator layer are represented by traps of a continuous distribution in the energy gap, we consider the effect of geometric location of nanocrystals in the insulator on the voltage dependences of gate current and small-signal admittance parameters.
Author Andrzej Igor Mazurak IMiO
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Jakub Maciej Jasiński IMiO
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak IMiO
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesPhysica Status Solidi. C: Current Topics in Solid State Physics , ISSN 1610-1642
Issue year2016
ConferenceEuropean Materials Research Society 2016 Spring Meeting (E-MRS 2016 Spring Meeting), 02-05-2016 - 06-05-2016, Lille, Francja
Keywords in Englishnanocrystals, nc-MIS structure, admittance parameters, tunneling
URL http://onlinelibrary.wiley.com/doi/10.1002/pssc.201600206/full
projectNanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles (NaMSeN). Project leader: Beck Romuald, , Phone: (+48) 22 234 75 34, start date 01-02-2016, planned end date 31-01-2019, V4-Japan/01/NaMSeN/02/2015, Implemented
WEiTI Projects financed by NCRD [Projekty finansowane przez NCBiR (NCBR)]
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, ArticleFromJournalAndMatConf
Ministerial score (2013-2016) = 15.0, 27-03-2017, ArticleFromJournalAndMatConf
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