Effect of nanocrystal geometric location on tunnel currents and small-signal admittance of MIS structures
Andrzej Igor Mazurak , Jakub Maciej Jasiński , Bogdan Majkusiak
AbstractIn this paper, basing on a theoretical model of the ncMIS (nanocrystal metal-insulator-semiconductor) structure, in which nanocrystals embedded in the insulator layer are represented by traps of a continuous distribution in the energy gap, we consider the effect of geometric location of nanocrystals in the insulator on the voltage dependences of gate current and small-signal admittance parameters.
|Journal series||Physica Status Solidi. C: Current Topics in Solid State Physics , ISSN 1610-1642|
|Conference||European Materials Research Society 2016 Spring Meeting (E-MRS 2016 Spring Meeting), 02-05-2016 - 06-05-2016, Lille, Francja|
|Keywords in English||nanocrystals, nc-MIS structure, admittance parameters, tunneling|
|project||Nanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles (NaMSeN). Project leader: Beck Romuald,
, Phone: (+48) 22 234 75 34, start date 01-02-2016, planned end date 31-01-2019, V4-Japan/01/NaMSeN/02/2015, Implemented
|Score|| = 15.0, 27-03-2017, ArticleFromJournalAndMatConf|
= 15.0, 27-03-2017, ArticleFromJournalAndMatConf
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.