Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma
Robert Paweł Mroczyński , Małgorzata Kalisz , Magdalena Dominik
AbstractThe feasibility of ultra-shallow fluorine and nitrogen implantation from RF plasma into silicon substrates, and the correlation between implantation process parameters, and electro-physical properties of obtained Metal-Insulator-Semiconductor (MIS) structures with hafnium oxide (HfOx) layer as a gate dielectric was investigated. The analysis of electrical characteristics of MIS structures proved that almost all fabricated structures after plasma implantation are characterized by lower flat-band voltage (Ufb) value (in absolute values) and lower effective charge (Qeff) in comparison to reference samples. However, the limitation of such an improvement is the specified value of power applied to the reactive chamber (i.e., 120 W). MIS structures are also characterized by a lower leakage current and very significant increase in the breakdown voltage (Ubr) value. The structural characterization has demonstrated that both types of plasma implantation result in the introduction of the relatively high concentration of fluorine and nitrogen into silicon subsurface area.
|Journal series||Physica Status Solidi. C: Current Topics in Solid State Physics , ISSN 1610-1642|
|Conference||European Materials Research Society 2016 Spring Meeting (E-MRS 2016 Spring Meeting), 02-05-2016 - 06-05-2016, Lille, Francja|
|Keywords in English||hafnium oxide (HfOx);RF plasma ion implantation;RIE;PECVD;MIS/MOS|
|project||Ultra-shallow plasma ion implantation for technology of advanced MOS/MOSFET structures fabricated on silicon and silicon carbide - characterization of phenomenon, attempts for technological optimization. Project leader: Kalisz Małgorzata, application date 03-06-2011, start date 07-12-2011, planned end date 06-12-2016, IMiO/2011/NCN/1, Implemented
|Score|| = 15.0, 27-03-2017, ArticleFromJournalAndMatConf|
= 15.0, 27-03-2017, ArticleFromJournalAndMatConf
|Citation count*||1 (2018-02-18)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.