Electrical characterization of MIS structures with HfOx gate dielectric films fabricated on silicon substrates modified by ultra-shallow ion implantation from RF plasma

Robert Paweł Mroczyński , Małgorzata Kalisz , Magdalena Dominik

Abstract

The feasibility of ultra-shallow fluorine and nitrogen implantation from RF plasma into silicon substrates, and the correlation between implantation process parameters, and electro-physical properties of obtained Metal-Insulator-Semiconductor (MIS) structures with hafnium oxide (HfOx) layer as a gate dielectric was investigated. The analysis of electrical characteristics of MIS structures proved that almost all fabricated structures after plasma implantation are characterized by lower flat-band voltage (Ufb) value (in absolute values) and lower effective charge (Qeff) in comparison to reference samples. However, the limitation of such an improvement is the specified value of power applied to the reactive chamber (i.e., 120 W). MIS structures are also characterized by a lower leakage current and very significant increase in the breakdown voltage (Ubr) value. The structural characterization has demonstrated that both types of plasma implantation result in the introduction of the relatively high concentration of fluorine and nitrogen into silicon subsurface area.
Author Robert Paweł Mroczyński IMiO
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Małgorzata Kalisz
Małgorzata Kalisz,,
-
, Magdalena Dominik IMiO
Magdalena Dominik,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesPhysica Status Solidi. C: Current Topics in Solid State Physics , ISSN 1610-1642
Issue year2016
Vol13
No10-12
Pages816-821
ConferenceEuropean Materials Research Society 2016 Spring Meeting (E-MRS 2016 Spring Meeting), 02-05-2016 - 06-05-2016, Lille, Francja
Keywords in Englishhafnium oxide (HfOx);RF plasma ion implantation;RIE;PECVD;MIS/MOS
DOIDOI:10.1002/pssc.201600061
URL http://onlinelibrary.wiley.com/doi/10.1002/pssc.201600061/abstract
project[2011/01/D/ST7/00640] Ultra-shallow plasma ion implantation for technology of advanced MOS/MOSFET structures fabricated on silicon and silicon carbide - characterization of phenomenon, attempts for technological optimization. Project leader: Kalisz Małgorzata, application date 03-06-2011, start date 07-12-2011, planned end date 06-12-2016, end date 06-06-2017, IMiO/2011/NCN/1, Completed
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, ArticleFromJournalAndMatConf
Ministerial score (2013-2016) = 15.0, 27-03-2017, ArticleFromJournalAndMatConf
Citation count*2 (2018-06-16)
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