Electrical properties of as-grown and proton-irradiated high purity silicon

Jerzy Krupka , Krzysztof Karcz , Paweł Kamiński , Leif Jensen


The complex permittivity of as-grown and proton-irradiated samples of high purity silicon obtained by the floating zone method was measured as a function of temperature at a few frequencies in microwave spectrum by employing the quasi TE011 and whispering gallery modes excited in the samples under test. The resistivity of the samples was determined from the measured imaginary part of the permittivity. The resistivity was additionally measured at RF frequencies employing capacitive spectroscopy as well as in a standard direct current experiment. The sample of as-grown material had the resistivity of ∼85 kΩ cm at room temperature. The sample irradiated with 23-MeV protons had the resistivity of ∼500 kΩ cm at 295 K and its behavior was typical of the intrinsic material at room and at elevated temperatures. For the irradiated sample, the extrinsic conductivity region is missing and at temperatures below 250 K hopping conductivity occurs. Thermal cycle hysteresis of the resistivity for the sample of as-grown material is observed. After heating and subsequent cooling of the sample, its resistivity decreases and then slowly (∼50 h) returns to the initial value.
Author Jerzy Krupka (FEIT / MO)
Jerzy Krupka,,
- The Institute of Microelectronics and Optoelectronics
, Krzysztof Karcz
Krzysztof Karcz,,
, Paweł Kamiński - [Instytutu Technologii Materialow Elektronicznych w Warszawie]
Paweł Kamiński,,
, Leif Jensen - [Topsil Semiconductor Materials AS]
Leif Jensen,,
Journal seriesNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions With Materials and Atoms, ISSN 0168-583X
Issue year2016
Publication size in sheets0.5
Keywords in EnglishSilicon; Resistivity; Radiation damage
ASJC Classification3105 Instrumentation; 3106 Nuclear and High Energy Physics
URL http://www.sciencedirect.com/science/article/pii/S0168583X16302117
ProjectThe Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł, , Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
WEiTI Działalność statutowa
Languageen angielski
Score (nominal)25
Score sourcejournalList
ScoreMinisterial score = 25.0, 30-06-2020, ArticleFromJournal
Ministerial score (2013-2016) = 25.0, 30-06-2020, ArticleFromJournal
Publication indicators Scopus Citations = 8; WoS Citations = 7; GS Citations = 12.0; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.906; WoS Impact Factor: 2016 = 1.109 (2) - 2016=1.113 (5)
Citation count*12 (2020-09-06)
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