Kinetics of anatase phase formation in TiO2 films during atomic layer deposition and post-deposition annealing

G Luka , Bartłomiej S. Witkowski , Łukasz Wachnicki , Mariusz Andrzejczuk , Małgorzata Lewandowska , Marek Godlewski


Anatase phase formation in TiO2 films obtained by atomic layer deposition (ALD) is investigated. At growth temperature close to 200 °C, the anatase phase of TiO2 originates from crystalline seeds formed in an amorphous layer. These seeds, formed in the initial stages of a film growth, allow an expansion of the anatase phase in the amorphous parts and their transformation. This expansion occurs either during a further growth process or during a post-deposition annealing at relatively low temperatures (160-220 °C). The process of a lateral expansion of the anatase phase within the amorphous one was found to be thermally activated with an activation energy of 1.5 eV. © 2013 The Royal Society of Chemistry.

Author G Luka - [Institute of Physics of the Polish Academy of Sciences]
G Luka,,
, Bartłomiej S. Witkowski - [Institute of Physics of the Polish Academy of Sciences]
Bartłomiej S. Witkowski,,
, Łukasz Wachnicki - [Institute of Physics of the Polish Academy of Sciences]
Łukasz Wachnicki,,
, Mariusz Andrzejczuk (FMSE / DMD)
Mariusz Andrzejczuk,,
- Division of Materials Design
, Małgorzata Lewandowska (FMSE / DMD)
Małgorzata Lewandowska,,
- Division of Materials Design
, Marek Godlewski - [Institute of Physics of the Polish Academy of Sciences]
Marek Godlewski,,
Journal seriesCrystEngComm, ISSN 1466-8033
Issue year2013
ASJC Classification3104 Condensed Matter Physics; 2500 General Materials Science; 1600 General Chemistry
Languageen angielski
Score (nominal)35
Score sourcejournalList
ScoreMinisterial score = 35.0, 31-01-2020, ArticleFromJournal
Ministerial score (2013-2016) = 35.0, 31-01-2020, ArticleFromJournal
Publication indicators Scopus Citations = 13; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 1.102; WoS Impact Factor: 2013 = 3.858 (2) - 2013=3.908 (5)
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