Kinetics of anatase phase formation in TiO
2 films during atomic layer deposition and post-deposition annealing
G Luka , Bartłomiej S. Witkowski , Łukasz Wachnicki , Mariusz Andrzejczuk , Małgorzata Lewandowska , Marek Godlewski
Anatase phase formation in TiO2 films obtained by atomic layer deposition (ALD) is investigated. At growth temperature close to 200 °C, the anatase phase of TiO2 originates from crystalline seeds formed in an amorphous layer. These seeds, formed in the initial stages of a film growth, allow an expansion of the anatase phase in the amorphous parts and their transformation. This expansion occurs either during a further growth process or during a post-deposition annealing at relatively low temperatures (160-220 °C). The process of a lateral expansion of the anatase phase within the amorphous one was found to be thermally activated with an activation energy of 1.5 eV. © 2013 The Royal Society of Chemistry.
|Journal series||CrystEngComm, ISSN 1466-8033|
|ASJC Classification||; ;|
|Score|| = 35.0, 31-01-2020, ArticleFromJournal|
= 35.0, 31-01-2020, ArticleFromJournal
|Publication indicators||= 13; : 2013 = 1.102; : 2013 = 3.858 (2) - 2013=3.908 (5)|
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