Charging/discharging processes in nanocrystaline MOS structures - Theoretical study

Dominik Tanous , Andrzej Igor Mazurak , Bogdan Majkusiak

Abstract

We present the study of impact of some parameters of the metal-insulatorsemiconductor structure with nanocrystals embedded in the insulator layer on the currentvoltage and capacitance-voltage characteristics with the bias voltage ramp rate as a parameter. The developed model is used as a tool for theoretical understanding the physics behind charging and discharging processes in the considered structures.
Author Dominik Tanous IMiO
Dominik Tanous,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Igor Mazurak IMiO
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak IMiO
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesJournal of Physics - Conference Series, ISSN 1742-6588 [1742-6596]
Issue year2016
Vol709
No012012
Pages1-6
Publication size in sheets0.5
ConferenceMicrotechnology and thermal problems in electronics (MICROTHERM 2015), 23-06-2015 - 25-06-2015, Łódź, Polska
DOIDOI:10.1088/1742-6596/709/1/012012
URL http://iopscience.iop.org/article/10.1088/1742-6596/709/1/012012
projectxxx. Project leader: Beck Romuald, , Phone: (+48) 22 234 75 34, application date 22-12-2011, start date 30-08-2012, planned end date 29-08-2015, IMiO/2011/NCN/5, Implemented
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, ArticleFromJournalAndMatConf
Ministerial score (2013-2016) = 15.0, 27-03-2017, ArticleFromJournalAndMatConf
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