Research of Voltage Source Inverter with mixed Silicon Carbide JFET transistors

Mariusz Zdanowski , Jacek Rąbkowski , Marek Patoka , Roman Barlik


In this work the problem of the power losses in the semiconductor elements made with silicon carbide (SiC) as applicable to high efficiency single-phase voltage source inverter was presented. Based on data from manufacturers regarding switching energy losses for individual semiconductor devices (SiC JFET, BJT and SiC MOSFET), analytical power loss calculations in leg configuration were determined. The calculations were compared with a measured results obtained from laboratory model single-phase full bridge inverter with rated power S = 2kVA.

Author Mariusz Zdanowski (FoEE / ICIE)
Mariusz Zdanowski,,
- The Institute of Control and Industrial Electronics
, Jacek Rąbkowski (FoEE / ICIE)
Jacek Rąbkowski,,
- The Institute of Control and Industrial Electronics
, Marek Patoka (FoEE / IEM)
Marek Patoka,,
- The Institute of Electrical Machines
, Roman Barlik (FoEE / ICIE)
Roman Barlik,,
- The Institute of Control and Industrial Electronics
Journal seriesPrzegląd Elektrotechniczny, ISSN 0033-2097
Issue year2013
ASJC Classification2208 Electrical and Electronic Engineering
Languageen angielski
Score (nominal)14
Score sourcejournalList
ScoreMinisterial score = 10.0, 17-12-2019, ArticleFromJournal
Ministerial score (2013-2016) = 14.0, 17-12-2019, ArticleFromJournal
Publication indicators Scopus Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2013 = 0.57; WoS Impact Factor: 2013 = 0.0 (2)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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