Research of Voltage Source Inverter with mixed Silicon Carbide JFET transistors
Mariusz Zdanowski , Jacek Rąbkowski , Marek Patoka , Roman Barlik
In this work the problem of the power losses in the semiconductor elements made with silicon carbide (SiC) as applicable to high efficiency single-phase voltage source inverter was presented. Based on data from manufacturers regarding switching energy losses for individual semiconductor devices (SiC JFET, BJT and SiC MOSFET), analytical power loss calculations in leg configuration were determined. The calculations were compared with a measured results obtained from laboratory model single-phase full bridge inverter with rated power S = 2kVA.
|Journal series||Przegląd Elektrotechniczny, ISSN 0033-2097|
|Score|| = 10.0, 17-12-2019, ArticleFromJournal|
= 14.0, 17-12-2019, ArticleFromJournal
|Publication indicators||= 0; : 2013 = 0.57; : 2013 = 0.0 (2)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.