450 nm (Al,In)GaN optical amplifier with double ‘j-shape’ waveguide for master oscillator power amplifier systems

Szymon Stanczyk , Anna Kafar , Szymon Grzanka , Marcin Sarzyński , Robert Paweł Mroczyński , Steve Najda , Tadeusz Suski , Piotr Perlin


In this paper we demonstrate 450 nm (Al,In)GaN graded index separate confinement heterostructure travelling wave optical amplifier with a double ‘j-shape’ waveguide. The length of the amplifier is 2.5 mm and the width of the ridge is 2.5 µm. The active region consists of three 3.5 nm thick quantum wells. The measured optical gain under CW operation in room temperature exceeded 29 dB for low power input signals. The saturation output power was 21 dBm for 400 mA driving current. The demonstrated amplifier, provides a good solution for the blue light, all nitrides, and master oscillator power amplifier systems.
Author Szymon Stanczyk
Szymon Stanczyk,,
, Anna Kafar
Anna Kafar,,
, Szymon Grzanka
Szymon Grzanka,,
, Marcin Sarzyński
Marcin Sarzyński,,
, Robert Paweł Mroczyński (FEIT / MO)
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Steve Najda
Steve Najda,,
, Tadeusz Suski
Tadeusz Suski,,
, Piotr Perlin
Piotr Perlin,,
Journal seriesOptics Express, ISSN 1094-4087, (A 40 pkt)
Issue year2018
Publication size in sheets0.5
URL https://www.osapublishing.org/oe/abstract.cfm?uri=oe-26-6-7351
Languageen angielski
Score (nominal)45
ScoreMinisterial score = 40.0, 13-04-2018, ArticleFromJournal
Ministerial score (2013-2016) = 45.0, 13-04-2018, ArticleFromJournal
Publication indicators WoS Impact Factor: 2016 = 3.307 (2) - 2016=3.436 (5)
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