Dielectric properties of highly resistive GaN crystal grown by ammonothermal metod at microwave frequencies
Jerzy Krupka , Marcin Zając , Robert Kucharski , Daniel Gryglewski
AbstractPermittivity, the dielectric loss tangent and conductivity of semi-insulating Gal- lium Nitride crystals have been measured as functions of frequency from 10 GHz to 50 GHz and temperature from 295 to 560 K employing quasi TE 0np mode dielectric resonator technique. Crystals were grown using ammonothermal method. Two kinds of doping were used to obtain high resistivity crystals; one with deep acceptors in form of transition metal ions, and the other with shallow Mg accep- tors. The sample compensated with transition metal ions exhibited semi-insulating behavior in the whole temperature range. The sample doped with Mg acceptors remained semi-insulating up to 390 K. At temperatures exceeding 390 K the conductivity term in the total dielectric loss tangent of Mg compensated sam- ple becomes dominant and it increases exponentially with activation energy of 1.14 eV. It has been proved that ammonothermal method with appropriate doping allows growth of high quality, temperature stable semi-insulating GaN crystals.
|Journal series||AIP Advances, ISSN 2158-3226|
|Publication size in sheets||0.3|
|project||The Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł,
, Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
|Score|| = 25.0, 27-03-2017, ArticleFromJournal|
= 25.0, 27-03-2017, ArticleFromJournal
|Publication indicators||: 2016 = 1.568 (2) - 2016=1.602 (5)|
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