Influence of thermometric characteristics on accuracy of junction temperature measurements of laboratory made SiC Schottky diodes

Paweł Górecki , Krzysztof Górecki , Ryszard Kisiel , Marcin Myśliwiec

Abstract

In this paper results of measurements of thermometric characteristics of silicon carbide Schottky diodes are presented. Such characteristics are used to measure junction temperature of semiconductor devices by means of the indirect electrical method. The examined diodes are described and obtained results of thermal and electrical measurements are presented. The influence of measurement current on the thermometric characteristics is studied. Junctions' temperature estimation errors are in depth studied and described.
Author Paweł Górecki
Paweł Górecki,,
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, Krzysztof Górecki
Krzysztof Górecki,,
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, Ryszard Kisiel (FEIT / MO)
Ryszard Kisiel,,
- The Institute of Microelectronics and Optoelectronics
, Marcin Myśliwiec (FEIT / MO)
Marcin Myśliwiec,,
- The Institute of Microelectronics and Optoelectronics
Pages660-663
Book Proceedings of the Baltic URSI Symposium supported by National Committees of the Baltic Countries, vol. CFP18N89-ART, 2018, IEEE, ISBN 978-83-949421-3-7, 300 p.
DOIDOI:10.23919/URSI.2018.8406709
URL https://ieeexplore.ieee.org/document/8406709/
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 09-08-2018, BookChapterMatConf
Ministerial score (2013-2016) = 15.0, 09-08-2018, BookChapterMatConf
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