Influence of thermometric characteristics on accuracy of junction temperature measurements of laboratory made SiC Schottky diodes
Paweł Górecki , Krzysztof Górecki , Ryszard Kisiel , Marcin Myśliwiec
AbstractIn this paper results of measurements of thermometric characteristics of silicon carbide Schottky diodes are presented. Such characteristics are used to measure junction temperature of semiconductor devices by means of the indirect electrical method. The examined diodes are described and obtained results of thermal and electrical measurements are presented. The influence of measurement current on the thermometric characteristics is studied. Junctions' temperature estimation errors are in depth studied and described.
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.