First tests of superthin, ion-implanted silicon strip detectors produced by low-temperature technique

A.J. Kordyasz , J. Kownacki , Ł. Kordyasz , M. Konop , Anna Bednarek , Mateusz Kowalczyk , J. Tarasiuk , M. Kisieliński , T. Kozik , E. Iiasecki , P. Sibczyński , A. Stolarz , J. Kowalska , A. Tucholski , J. Srebrny , M. Wolińska-Cichocka , P.J Napiórkowski , J Sarnecki , D. Lipiński , H. Wodzińska , Marian Teodorczyk , M. Gajewski , A. Zagojski , Konrad Krzyżak


A new technique of producing thin strip detectors was developed. The principle of the technique is the application of a low-temperature baking process instead of high temperature annealing. This thermal treatment follows the B+ ion implantation and evaporation of Al as detector contacts, which are created using a single adjusted Al mask in form of a comb. The thickness distribution along X and Y directions for a thin silicon epitaxial membrane was measured by the energy loss of α particles from 241Am ((Eα) = 5.5 MeV). Preliminary tests of the first 5 μm thin strip detector have been performed with α particles and fission fragments from 252Cf. The ΔE-E ion identification plots were created using a telescope consisting of our one thin strip of the ΔE strip detector (5 μm thick) followed by a typical 300 μm Ortec E detector.
Author A.J. Kordyasz
A.J. Kordyasz,,
, J. Kownacki
J. Kownacki,,
, Ł. Kordyasz
Ł. Kordyasz,,
, M. Konop
M. Konop,,
, Anna Bednarek
Anna Bednarek,,
, Mateusz Kowalczyk WF
Mateusz Kowalczyk,,
- Faculty of Physics
, J. Tarasiuk
J. Tarasiuk,,
, M. Kisieliński
M. Kisieliński,,
, T. Kozik
T. Kozik,,
, E. Iiasecki
E. Iiasecki,,
et al.
Journal seriesActa Physica Polonica B, ISSN 0587-4254
Issue year2016
Publication size in sheets0.5
Keywords in EnglishAlpha particles; Aluminum; Energy dissipation; Ions; Low temperature phenomena; Silicon detectors; Strip metal; Temperature, B+ ion implantation; Fission fragment; High-temperature annealing; Ion identifications; Ion-implanted silicon; Low temperature techniques; Low temperatures; Thickness distributions, Ion implantation
Languageen angielski
Score (nominal)20
ScoreMinisterial score = 20.0, 28-11-2017, ArticleFromJournal
Ministerial score (2013-2016) = 20.0, 28-11-2017, ArticleFromJournal
Publication indicators WoS Impact Factor: 2016 = 0.904 (2) - 2016=0.756 (5)
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