First tests of superthin, ion-implanted silicon strip detectors produced by low-temperature technique
A.J. Kordyasz , J. Kownacki , Ł. Kordyasz , M. Konop , Anna Bednarek , Mateusz Kowalczyk , J. Tarasiuk , M. Kisieliński , T. Kozik , E. Iiasecki , P. Sibczyński , A. Stolarz , J. Kowalska , A. Tucholski , J. Srebrny , M. Wolińska-Cichocka , P.J Napiórkowski , J Sarnecki , D. Lipiński , H. Wodzińska , Marian Teodorczyk , M. Gajewski , A. Zagojski , Konrad Krzyżak
AbstractA new technique of producing thin strip detectors was developed. The principle of the technique is the application of a low-temperature baking process instead of high temperature annealing. This thermal treatment follows the B+ ion implantation and evaporation of Al as detector contacts, which are created using a single adjusted Al mask in form of a comb. The thickness distribution along X and Y directions for a thin silicon epitaxial membrane was measured by the energy loss of α particles from 241Am ((Eα) = 5.5 MeV). Preliminary tests of the first 5 μm thin strip detector have been performed with α particles and fission fragments from 252Cf. The ΔE-E ion identification plots were created using a telescope consisting of our one thin strip of the ΔE strip detector (5 μm thick) followed by a typical 300 μm Ortec E detector.
|Journal series||Acta Physica Polonica B, ISSN 0587-4254|
|Publication size in sheets||0.5|
|Keywords in English||Alpha particles; Aluminum; Energy dissipation; Ions; Low temperature phenomena; Silicon detectors; Strip metal; Temperature, B+ ion implantation; Fission fragment; High-temperature annealing; Ion identifications; Ion-implanted silicon; Low temperature techniques; Low temperatures; Thickness distributions, Ion implantation|
|Score|| = 20.0, 28-11-2017, ArticleFromJournal|
= 20.0, 28-11-2017, ArticleFromJournal
|Publication indicators||: 2016 = 0.904 (2) - 2016=0.756 (5)|
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