Small-Signal Lumped-Element Equivalent Model for High Operating Temperature Infrared Photodetectors
Katarzyna Opalska , Leszek J. Opalski , Wojciech Wiatr , Józef Piotrowski , Dominik Krzysztof Kasprowicz
AbstractWe present a simple small-signal parameterized equivalent circuit for HgCdTe pho todetectors operating at high temperatures in the middle and long wavelength of the infrared spectrum. This circuit is capable of accurate modeling the impedance of these devices upon bandwidth of several GHz and for a wide range of bias voltage and temperatures. We have implemented this model as a parameterized sub-circuit in generic circuit simulator from SPICE fa mily, to study conditions for signal propagation in the photodetect or signal path at low level of IR illumination. Analyses based on this model provide a useful insight into photo diode operation.
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