Characterization of sp 3 bond content of carbon films deposited by high power gas injection magnetron sputtering method by UV and VIS Raman spectroscopy
Krzysztof Zdunek , Rafał Chodun , B. Wicher , Katarzyna Nowakowska-Langier , Sebastian Okrasa
AbstractThis paper presents the results of investigations of carbon films deposited by a modified version of the magnetron sputtering method – HiPGIMS (High Power Gas Injection Magnetron Sputtering). In this experiment, the magnetron system with inversely polarized electrodes (sputtered cathode at ground potential and positively biased, spatially separated anode) was used. This arrangement allowed us to conduct the experiment using voltages ranging from 1 to 2 kV and a power supply system equipped with 25/50 μF capacitor battery. Carbon films were investigated by VIS/UV Raman spectroscopy. Sp3/sp2 bonding ratio was evaluated basing the elementary components of registered spectra. Our investigation showed that sp3 bond content increases with discharge power but up to specific value only. In extreme conditions of generating plasma impulses, we detected a reversed relation of the sp3/sp2 ratio. In our opinion, a energy of plasma pulse favors nucleation of a sp3 phase because of a relatively higher ionization state but in extreme cases the influence of energy is reversed.
|Journal series||Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, ISSN 1386-1425, (A 30 pkt)|
|Publication size in sheets||0.5|
|Conference||XIVth International Conference on Molecular Spectroscopy (ICMS 2017), 03-09-2017 - 07-09-2017, Białka Tatrzańska, Polska|
|Keywords in English||DLC films; Raman spectroscopy; UV Raman spectroscopy; HiPIMS; HiPGIMS; Magnetron sputtering|
|Score|| = 30.0, 23-04-2018, ArticleFromJournal|
= 30.0, 23-04-2018, ArticleFromJournal
|Publication indicators||: 2016 = 2.536 (2) - 2016=2.346 (5)|
|Citation count*||1 (2019-01-16)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.