Reactive ion etching (RIE) of silicon for the technology of nanoelectronic devices and structures

Piotr Wiśniewski , Robert Paweł Mroczyński , Bogdan Majkusiak

Abstract

MN-p-13:
Author Piotr Wiśniewski (FEIT / MO | CAMT)
Piotr Wiśniewski,,
- The Institute of Microelectronics and Optoelectronics
, Robert Paweł Mroczyński (FEIT / MO)
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-2
Publication size in sheets0.3
Book Wiśniowski Piotr (eds.): Materiały Konferencyjne: XII Konferencja Naukowa Technologia Elektronowa, ELTE '2016, vol. PenDrive, 2016, Kraków, Polska, Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica, 226 p.
Keywords in English silicon, RIE, MOS, TFET, structural characterization
ProjectNanophotonics with metal – group-IV-semiconductor nanocomposites: From single nanoobjects to functional ensembles (NaMSeN). Project leader: Beck Romuald, , Phone: (+48) 22 234 75 34, start date 01-02-2016, planned end date 31-01-2019, V4-Japan/01/NaMSeN/02/2015, Implemented
WEiTI Projects financed by NCRD [Projekty finansowane przez NCBiR (NCBR)]
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 18-02-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 18-02-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 2; GS Citations = 2.0
Citation count*2 (2020-09-11)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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