Effect of interface traps parameters on admittance characteristics of the MIS (metal-insulator-semiconductor) tunnel structures

Jakub Maciej Jasiński , Andrzej Igor Mazurak , Bogdan Majkusiak

Abstract

Interface traps density (Nit) and gate insulator thickness (tox) impact on MIS tunnel structure electrical characteristics is discussed in respect to bias voltage range corresponding to inversion in the semiconductor substrate region. Effect of Nit and tox on equilibrium and non-equilibrium operation regime of the device is presented. Different models of the small-signal response of interface traps are proposed and discussed in respect to several phenomena related to the traps charging and discharging processes. Presented analysis was performed for the MIS structures with the gate dielectric made of silicon dioxide (SiO2) and hafnium oxide (HfOx). The obtained results proved that the surface density of interface traps (Nit) and the insulator thickness (tox) have correlated impact on the transition between equilibrium and non-equilibrium operation of the MIS tunnel structures.
Author Jakub Maciej Jasiński IMiO
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Andrzej Igor Mazurak IMiO
Andrzej Igor Mazurak,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak IMiO
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Pages1-8
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishInterfaces; Metals; Semiconductors; Silica; Semiconductor materials; Hafnium; Oxides
DOIDOI:10.1117/12.2261666
URL http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=2595262
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Citation count*0
Additional fields
Numer pracy1017508
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