An influence of silicon substrate parameters on a responsivity of MOSFET-based terahertz detectors

Krzysztof Kucharski , Piotr Zbigniew Zagrajek , Dominik Tomaszewski , A. Panas , Grzegorz Głuszko , J Marczewski , Paweł Kopyt


Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.

Author Krzysztof Kucharski
Krzysztof Kucharski,,
, Piotr Zbigniew Zagrajek
Piotr Zbigniew Zagrajek,,
, Dominik Tomaszewski (FCEMP)
Dominik Tomaszewski,,
- Faculty of Civil Engineering, Mechanics and Petrochemistry
, A. Panas - [Instytut Technologii Elektronowej]
A. Panas,,
, Grzegorz Głuszko
Grzegorz Głuszko,,
, J Marczewski
J Marczewski,,
, Paweł Kopyt (FEIT / IRMT)
Paweł Kopyt,,
- The Institute of Radioelectronics and Multimedia Technology
Journal seriesActa Physica Polonica A, ISSN 0587-4246
Issue year2016
ASJC Classification3100 General Physics and Astronomy
Languageen angielski
Score (nominal)15
Score sourcejournalList
ScoreMinisterial score = 15.0, 30-01-2020, ArticleFromJournal
Ministerial score (2013-2016) = 15.0, 30-01-2020, ArticleFromJournal
Publication indicators Scopus Citations = 1; WoS Citations = 1; Scopus SNIP (Source Normalised Impact per Paper): 2016 = 0.399; WoS Impact Factor: 2016 = 0.469 (2) - 2016=0.489 (5)
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* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.
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