A study on power losses of the 50 kVA SiC converter including reverse conduction phenomenon
Jacek Rąbkowski , T. Paatek
This paper deals with performance of the 50 kVA three-phase converter built with switches based on SiC MOSFET and anti-parallel Schottky diodes. In contrast to popular IGBT converters, a negative switch current is capable of flowing through the reverse conducting transistor, which results in different distribution of power losses among the devices. Thus, equations describing the conduction power losses of the transistor and diode are improved and verified by means of circuit simulations in Saber. Moreover, a comparison of power losses calculated with the use of standard and new equations is also shown. Total power losses in three SiC MOSFET modules of a 50 kVA converter operating at 20 kHz are up to 30% lower when reverse conduction is taken into account. This shows the importance of the discussed problem and proves that much better accuracy in the estimation of power losses and junction temperatures of SiC devices may be obtained with the proposed approach.
|Journal series||Bulletin of the Polish Academy of Sciences, Technical Sciences, ISSN 0239-7528|
|ASJC Classification||; ; ; ;|
|Score|| = 20.0, 24-09-2020, ArticleFromJournal|
= 25.0, 24-09-2020, ArticleFromJournal
|Publication indicators||= 3; = 1; = 6.0; : 2016 = 1.229; : 2016 = 1.156 (2) - 2016=1.238 (5)|
|Citation count*||6 (2020-09-16)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.