Liquid phase epitaxial growth and characterization of Nd:YAG/YAG structures for thin-film lasers
Jerzy Sarnecki , Michał Malinowski , Jerzy Skwarcz , Ryszard Jabłoński , Krystyna Mazur , Dariusz Litwin , Jerzy Sas
AbstractLiquid phase epitaxy (LPE) is a suitable technique to produce diode laser-pumped solid state lasers with a planar waveguide structure. The thin films of Nd3+, Ga3+ and Lu3+ doped YAG have been grown form a supercooled molten garnet-flux high temperature solution on undoped YAG substrates by the standard LPE dipping technique. The emission spectra and fluorescence lifetimes have been measured for Nd:YAG layers with different concentration of Nd3+ ions. Additionally, the films were investigated versus concentration of neodymium, gallium and lutetium using ESR, x-ray diffraction and micro interferometric techniques. According to above measurements it can be concluded that the obtained epitaxial structures are of good quality.
|Book||Woliński Wiesław, Jankiewicz Zdzisław (eds.): Proceedings of SPIE Laser Technology VI: Progress in Lasers, vol. 4237, 2000, 1000 20th St. Bellingham WA 98225-6705 USA, SPIE, ISBN 9780819439116, 256 p.|
|Publication indicators||= 6; = 4; = 10.0|
|Citation count*||10 (2015-05-01)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.