Modeling of tunnel field effect transistor: the impact of construction parameters
Piotr Wiśniewski , Bogdan Majkusiak
AbstractThe aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET’s construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.
|Publication size in sheets||0.5|
|Book||Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351|
|Keywords in English||Field effect transistors; Modeling; Numerical analysis; Electrons|
|Score|| = 15.0, 31-01-2020, BookChapterMatConfByIndicator|
= 15.0, 31-01-2020, BookChapterMatConfByIndicator
|Publication indicators||= 0; = 0|
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