Modeling of tunnel field effect transistor: the impact of construction parameters

Piotr Wiśniewski , Bogdan Majkusiak


The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET’s construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.
Author Piotr Wiśniewski (FEIT / MO | CAMT)
Piotr Wiśniewski,,
- The Institute of Microelectronics and Optoelectronics
, Bogdan Majkusiak (FEIT / MO)
Bogdan Majkusiak,,
- The Institute of Microelectronics and Optoelectronics
Publication size in sheets0.5
Book Swatowska Barbara, Maziarz Wojciech, Pisarkiewicz Tadeusz, Kucewicz Wojciech (eds.): Proceedings of SPIE Electron Technology Conference 2016, vol. 1, no. 10175, 2016, P.O.Box 10, Bellingham, Washington 98227-0010 USA, SPIE, ISBN 9781510608436, 354 p., DOI:10.1117/12.2270351
Keywords in EnglishField effect transistors; Modeling; Numerical analysis; Electrons
Languageen angielski
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 15.0, 31-01-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 31-01-2020, BookChapterMatConfByIndicator
Publication indicators Scopus Citations = 0; WoS Citations = 0
Citation count*
Additional fields
Numer pracy101750J
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