Highly resistive GaN substrates for high frequency electronics
R. Dwiliński , R. Doradziński , R. Sierzputowski , R. Kucharski , M. Zając , Jerzy Krupka
AbstractBulk GaN crystals are regarded as the most promising candidates for substrates for optoelectronic, high power and high frequency electronic devices. In this paper some principles of ammonothermal method of bulk gallium nitride growth are presented. Excellent structural properties and wide spectrum of electrical parameters of obtained this way truly bulk GaN crystals are shown. In considered crystals a low dislocation density (5x103 cm-2) is attainable. High crystallinity is manifested by extremely flat crystal lattice and very narrow (FWHM=16 arcsec) X-ray rocking curves measured for (0002) plane. Ammonothermal GaN substrates enabled to grow high quality, strain-free homoepitaxial layers and AlGaN/GaN heterostructures. This may enable a breakthrough in manufacturing of aforementioned high power electronic devices.
|Publication size in sheets||0.3|
|Book||Weigel R., Schmidt L.-P. (eds.): Proceedings of The 43rd European Microwave Conference, 2013, Rue Louis de Geer 6, B-1348 Louvain-la-Neuve, Belgium, European Microwave Association , ISBN 978-2-87487-031-6, 2000 p.|
|Keywords in English||III–V semiconductors, Gallium Nitride, ammonothermal|
|Score|| = 10.0, 25-05-2020, BookChapterMatConfByIndicator|
= 15.0, 25-05-2020, BookChapterMatConfByIndicator
|Publication indicators||= 1; = 1; = 3.0|
|Citation count*||3 (2020-09-06)|
* presented citation count is obtained through Internet information analysis and it is close to the number calculated by the Publish or Perish system.