Highly resistive GaN substrates for high frequency electronics

R. Dwiliński , R. Doradziński , R. Sierzputowski , R. Kucharski , M. Zając , Jerzy Krupka


Bulk GaN crystals are regarded as the most promising candidates for substrates for optoelectronic, high power and high frequency electronic devices. In this paper some principles of ammonothermal method of bulk gallium nitride growth are presented. Excellent structural properties and wide spectrum of electrical parameters of obtained this way truly bulk GaN crystals are shown. In considered crystals a low dislocation density (5x103 cm-2) is attainable. High crystallinity is manifested by extremely flat crystal lattice and very narrow (FWHM=16 arcsec) X-ray rocking curves measured for (0002) plane. Ammonothermal GaN substrates enabled to grow high quality, strain-free homoepitaxial layers and AlGaN/GaN heterostructures. This may enable a breakthrough in manufacturing of aforementioned high power electronic devices.
Author R. Dwiliński - [Ammono S.A.]
R. Dwiliński,,
, R. Doradziński - [Ammono S.A.]
R. Doradziński,,
, R. Sierzputowski
R. Sierzputowski,,
, R. Kucharski - [Ammono S.A.]
R. Kucharski,,
, M. Zając - [Ammono S.A.]
M. Zając,,
, Jerzy Krupka (FEIT / MO)
Jerzy Krupka,,
- The Institute of Microelectronics and Optoelectronics
Publication size in sheets0.3
Book Weigel R., Schmidt L.-P. (eds.): Proceedings of The 43rd European Microwave Conference, 2013, Rue Louis de Geer 6, B-1348 Louvain-la-Neuve, Belgium, European Microwave Association , ISBN 978-2-87487-031-6, 2000 p.
Keywords in EnglishIII–V semiconductors, Gallium Nitride, ammonothermal
URL http://ieeexplore.ieee.org/document/6686707/
Languageen angielski
Highly resistive GaN substrates for high frequency.pdf 74.76 KB
Score (nominal)15
Score sourceconferenceIndex
ScoreMinisterial score = 10.0, 25-05-2020, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 25-05-2020, BookChapterMatConfByIndicator
Publication indicators WoS Citations = 1; Scopus Citations = 1; GS Citations = 3.0
Citation count*3 (2020-09-06)
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