Ultra-shallow ion implantation from RF plasma and its effect on electro-physical properties of MOS structures with Siox/Hfox double-gate dielectric layers fabricated on Si and 4H-SiC

Robert Paweł Mroczyński , Małgorzata Kalisz , Jakub Maciej Jasiński , Norbert Kwietniewski , Magdalena Dominik , Romuald Beck , Jan Szmidt

Abstract

MN-p-14:
Author Robert Paweł Mroczyński IMiO
Robert Paweł Mroczyński,,
- The Institute of Microelectronics and Optoelectronics
, Małgorzata Kalisz
Małgorzata Kalisz,,
-
, Jakub Maciej Jasiński IMiO
Jakub Maciej Jasiński,,
- The Institute of Microelectronics and Optoelectronics
, Norbert Kwietniewski IMiO
Norbert Kwietniewski,,
- The Institute of Microelectronics and Optoelectronics
, Magdalena Dominik IMiO
Magdalena Dominik,,
- The Institute of Microelectronics and Optoelectronics
, Romuald Beck IMiO
Romuald Beck,,
- The Institute of Microelectronics and Optoelectronics
, Jan Szmidt IMiO
Jan Szmidt,,
- The Institute of Microelectronics and Optoelectronics
Pages1-2
Publication size in sheets0.3
Book Wiśniowski Piotr (eds.): Materiały Konferencyjne: XII Konferencja Naukowa Technologia Elektronowa, ELTE '2016, vol. PenDrive, 2016, Katedra Elektroniki, Wydział Informatyki Elektroniki i Telekomunikacji Akademia Górniczo-Hutnicza im. Stanisława Staszica, 226 p.
Keywords in Englishplasma implantation, MOS, HfOx, Si, SiC
projectUltra-shallow plasma ion implantation for technology of advanced MOS/MOSFET structures fabricated on silicon and silicon carbide - characterization of phenomenon, attempts for technological optimization. Project leader: Kalisz Małgorzata, application date 03-06-2011, start date 07-12-2011, planned end date 06-12-2016, IMiO/2011/NCN/1, Implemented
WEiTI Projects financed by NSC [Projekty finansowane przez NCN]
Languageen angielski
Score (nominal)15
ScoreMinisterial score = 15.0, 27-03-2017, BookChapterMatConfByIndicator
Ministerial score (2013-2016) = 15.0, 27-03-2017, BookChapterMatConfByIndicator
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