Design of a Wideband Low Noise Amplifier for a FMCW Synthetic Aperture Radar in 130 nm SiGe BiCMOS Technology
Daniel Pietroń , Igor Butryn , Łukasz Wiechowski , Witold Pleskacz
AbstractIn this paper, design of a wideband low noise amplifier for a FMCW synthetic aperture radar is discussed. In the first part, the paper describes the fundamentals of Synthetic Aperture Radar (SAR) technique and Frequency Modulated Continuous Wave (FMCW) modulation. The solutions of wideband low-noise amplifiers are described subsequently. It is found that a two-stage common-emitter (CE) Low Noise Amplifier (LNA) allows the most satisfactory parameters to be achieved among the investigated solutions. The simulations of the LNA predict a 4.5 dB noise figure, 16.2 dB conversion gain, operating band from 30 GHz to 40 GHz, reflection coefficients below −10 dB and power consumption equal to 9.3 mW. The LNA was designed in IHP − 130 nm SiGe BiCMOS technology and the simulations were performed with Cadence SpectreRF.
|Publication size in sheets||0.5|
|Book||Napieralski Andrzej (eds.): Proceedings of 25th International Conference Mixed Design of Integrated Circuits and Systems MIXDES 2018, vol. CFP18MIX-CDR, 2018, Lodz University of Technology, Department of Microelectronics and Computer Science, ISBN 978-83-63578-13-8, 475 p.|
|project||The Development of Design, Processing and Testing Methods of the Electronic Devices and Materials for Microelectronics and Optoelectronics. Project leader: Szczepański Paweł,
, Phone: (48 22) 234 58 70, start date 01-01-2015, planned end date 31-12-2015, end date 31-05-2016, IMiO/2015/STATUT/1, Implemented
|Score|| = 15.0, 11-03-2019, BookChapterMatConfByIndicator|
= 15.0, 11-03-2019, BookChapterMatConfByIndicator
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