Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization
Jakub Skibiński , Piotr Caban , Tomasz Wejrzanowski , Mateusz Grybczuk , Krzysztof Kurzydłowski
AbstractThe present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flow rate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. The aim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since there are many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactor geometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have been considered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside the reactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numerical simulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during the growth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of the substrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and its growth rate.
|Journal series||Journal of Power Technologies, ISSN 2083-4187, e-ISSN 2083-4195|
|Publication size in sheets||0.5|
|Keywords in Polish||Epitaksja z fazy gazowej z użyciem związków metaloorganicznych, metoda objętości skończonych, półprzewodniki, azotek aluminium|
|Keywords in English||metalorganic vapor phase epitaxy, Finite Volume Method, semiconductors, aluminum nitride|
|Score|| = 12.0, 28-11-2017, ArticleFromJournal|
= 12.0, 28-11-2017, ArticleFromJournal
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