Thermal Parameters of Monocrystalline GaN Schottky Diodes
Paweł Górecki , Krzysztof Górecki , Ryszard Kisiel , Marcin Myśliwiec
AbstractThe aim of this paper is to compare the thermal properties of monocrystalline GaN devices assembled to direct bonding copper (DBC) substrate by silver sintering and solid–liquid interdiffusion (SLID) techniques. The construction of the examined diodes is described and selected results of measurements of thermal parameters of the tested diodes are discussed. It was concluded that the lowest values of thermal resistance between the junction and the case are achieved using the SLID technique, despite the fact that this process was performed at a lower temperature. Moreover, it was concluded that the method of assembly of a package to the heat sink has influence on thermal resistance between the junction and the surroundings.
|Journal series||IEEE Transactions on Electron Devices, ISSN 0018-9383, (A 35 pkt)|
|Publication size in sheets||0.5|
|Keywords in English||Schottky diodes; Temperature measurement; Current measurement; Impedance measurement; Voltage measurement; Gallium nitride|
|project||[244005 POL] Wysokonapięciowe diody Schottky'ego na bazie monokryształów GaN do zastosowań w przyrządach wysokich mocy. . Project leader: Łukasiak Lidia,
, Phone: (+48) 22 234 7147, application date 24-01-2014, start date 15-02-2016, planned end date 30-12-2017, Implemented
|Score||= 35.0, 12-07-2019, ArticleFromJournal|
|Publication indicators||= 0; : 2017 = 1.49; : 2017 = 2.62 (2) - 2017=2.746 (5)|
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