Thermal Parameters of Monocrystalline GaN Schottky Diodes

Paweł Górecki , Krzysztof Górecki , Ryszard Kisiel , Marcin Myśliwiec

Abstract

The aim of this paper is to compare the thermal properties of monocrystalline GaN devices assembled to direct bonding copper (DBC) substrate by silver sintering and solid–liquid interdiffusion (SLID) techniques. The construction of the examined diodes is described and selected results of measurements of thermal parameters of the tested diodes are discussed. It was concluded that the lowest values of thermal resistance between the junction and the case are achieved using the SLID technique, despite the fact that this process was performed at a lower temperature. Moreover, it was concluded that the method of assembly of a package to the heat sink has influence on thermal resistance between the junction and the surroundings.
Author Paweł Górecki
Paweł Górecki,,
-
, Krzysztof Górecki - Akademia Morska w Gdyni
Krzysztof Górecki,,
-
, Ryszard Kisiel (FEIT / MO)
Ryszard Kisiel,,
- The Institute of Microelectronics and Optoelectronics
, Marcin Myśliwiec (FEIT / MO)
Marcin Myśliwiec,,
- The Institute of Microelectronics and Optoelectronics
Journal seriesIEEE Transactions on Electron Devices, ISSN 0018-9383, (A 35 pkt)
Issue year2019
Vol66
No5
Pages2132-2138
Publication size in sheets0.5
Keywords in EnglishSchottky diodes; Temperature measurement; Current measurement; Impedance measurement; Voltage measurement; Gallium nitride
ASJC Classification2208 Electrical and Electronic Engineering; 2504 Electronic, Optical and Magnetic Materials
DOIDOI:10.1109/TED.2019.2907066
URL https://ieeexplore.ieee.org/document/8682112
project[244005 POL] Wysokonapięciowe diody Schottky'ego na bazie monokryształów GaN do zastosowań w przyrządach wysokich mocy. . Project leader: Łukasiak Lidia, , Phone: (+48) 22 234 7147, application date 24-01-2014, start date 15-02-2016, planned end date 30-12-2017, Implemented
WEiTI Projects financed by NCRD [Projekty finansowane przez NCBiR (NCBR)]
Languageen angielski
Score (nominal)35
ScoreMinisterial score = 35.0, 12-07-2019, ArticleFromJournal
Publication indicators WoS Citations = 0; Scopus SNIP (Source Normalised Impact per Paper): 2017 = 1.49; WoS Impact Factor: 2017 = 2.62 (2) - 2017=2.746 (5)
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